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Электронный компонент: GM71CS16400C/CL-6

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GM71C(S)16400C/CL
4,194,304 WORDS x 4 BIT
CMOS DYNAMIC RAM
Description
T h e G M 7 1 C ( S ) 1 6 4 0 0 C / C L i s t h e n e w
generation dynamic RAM organized 4,194,304
words x 4 bit. GM71C(S)16400C/CL has
realized higher density, higher performance and
various functions by utilizing advanced CMOS
process technology. The GM71C(S)16400C/CL
offers Fast Page Mode as a high speed access
mode. Multiplexed address inputs permit the
GM71C(S)16400C/CL to be packaged in a
standard 300 mil 24(26) pin SOJ, and a standard
300 mil 24(26) pin plastic TSOP II. The package
size provides high system bit densities and is
compatible with widely available automated
testing and insertion equipment. System oriented
features include single power supply 5V+/-10%
tolerance, direct interfacing capability with high
performance logic families such as Schottky
TTL.
Features
* 4,194,304 Words x 4 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
* Low Power
Active : 495/440/385mW (MAX)
Standby : 11mW (CMOS level : MAX)
: 0.83mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 4096 Refresh Cycles/64ms
* 4096 Refresh Cycles/128ms(L-version)
* Battery backup operation (L-version)
* Test function : 16bit parallel test mode
GM71C(S)16400C/CL-5
GM71C(S)16400C/CL-6
GM71C(S)16400C/CL-7
t
RAC
t
CAC
t
RC
t
PC
50
60
13
15
90
110
35
40
70
18
130
45
Pin Configuration
24(26) SOJ
(Top View)
V
CC
I/O1
I/O2
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
V
SS
I/O4
I/O3
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
8
9
10
11
12
13
14
15
16
17
18
19
21
22
23
24
25
26
24(26) TSOP II
V
CC
I/O1
I/O2
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
V
SS
I/O4
I/O3
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
8
9
10
11
12
13
14
15
16
17
18
19
21
22
23
24
25
26
(Unit: ns)
Rev 0.1 / Apr'01
GM71C(S)16400C/CL
Rev 0.1 / Apr'01
Pin Description
Pin
Function
Pin
Function
A0-A11
A0-A11
I/O1-I/O4
V
CC
V
SS
Address Inputs
Refresh Address Inputs
Data-input/Data-output
Row Address Strobe
Column Address Strobe
Write Enable
Output Enable
Power (+5.0V)
Ground
Ordering Information
Type No.
Access Time
Package
GM71C(S)16400CJ/CLJ-5
GM71C(S)16400CJ/CLJ-6
GM71C(S)16400CJ/CLJ-7
50ns
60ns
70ns
300 Mil
24(26) Pin
Plastic SOJ
GM71C(S)16400CT/CLT-5
GM71C(S)16400CT/CLT-6
GM71C(S)16400CT/CLT-7
50ns
60ns
70ns
300 Mil
24(26) Pin
Plastic TSOP II
Absolute Maximum Ratings
Note: All voltage referred to Vss.
RAS
CAS
Recommended DC Operating Conditions (T
A
= 0 ~ 70C)
OE
NC
No Connection
WE
Symbol
Parameter
Rating
Unit
T
A
T
STG
V
IN/OUT
V
CC
I
OUT
0 ~ 70
-55 ~ 125
-1.0 ~ 7.0
-1.0 ~ 7.0
50
Ambient Temperature under Bias
Storage Temperature
Voltage on any Pin Relative to V
SS
Supply Voltage Relative to V
SS
Short Circuit Output Current
V
V
mA
P
T
1.0
Power Dissipation
W
C
C
Symbol
Parameter
Unit
V
CC
V
IH
V
IL
Supply Voltage
Input High Voltage
Input Low Voltage
V
V
V
Max
5.5
6.5
0.8
Typ
5.0
-
-
Min
4.5
2.4
-1.0
GM71C(S)16400C/CL
Rev 0.1 / Apr'01
DC Electrical Characteristics (V
CC
= 5.0V+/-10%, Vss = 0V, T
A
= 0 ~ 70C)
Note: 1. I
CC
depends on output load condition when the device is selected.
I
CC
(max) is specified at the output open condition.
2. Address can be changed once or less while RAS = V
IL
.
3. Address can be changed once or less while CAS = V
IH
.
4. CAS = L (<=0.2) while RAS = L (<=0.2).
5. L-version.
Symbol
Parameter
Note
V
OH
V
OL
Output Level
Output "H" Level Voltage (I
OUT
= -5mA)
Unit
Max
V
CC
0.4
Min
2.4
0
Output Level
Output "L" Level Voltage (I
OUT
= 4.2mA)
I
CC1
Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling
:
t
RC
=
t
RC
min)
I
CC2
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = V
IH
,
D
OUT
=
High-Z)
I
CC3
RAS Only Refresh Current
Average Power Supply Current
RAS Only Refresh Mode
(t
RC
=
t
RC
min)
I
CC4
I
CC5
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS >= V
CC
- 0.2V, D
OUT
= High-Z)
1
-
I
CC6
CAS-before-RAS Refresh Current
(t
RC
=
t
RC
min)
I
CC7
150
-
I
CC8
I
L(I)
10
-10
I
L(O)
10
-10
Input Leakage Current
Any Input (0V
<=
V
IN
<=
6V)
Output Leakage Current
(D
OUT
is Disabled, 0V
<=
V
OUT
<=
6V)
2
-
V
V
mA
uA
uA
-
Standby Current RAS = V
IH
CAS = V
IL
D
OUT
=
Enable
5
1
mA
Battery Backup Operating Current(Standby with CBR Refresh)
(CBR refresh, t
RC
= 31.3us
,
t
RAS
<=
0.3
us,
D
OUT
=
High-Z, CMOS interface)
350
-
uA
4, 5
uA
5
mA
1, 2
mA
mA
2
mA
1, 3
mA
90
-
50ns
60ns
70ns
80
70
-
-
90
-
50ns
60ns
70ns
80
70
-
-
-
80
-
50ns
60ns
70ns
70
60
-
-
90
-
50ns
60ns
70ns
80
70
-
Fast Page Mode Current
Average Power Supply Current
Fast Page Mode
(RAS = V
IL
, CAS, Address Cycling: t
PC
= t
PC
min)
GM71C(S)16400C/CL
Rev 0.1 / Apr'01
Capacitance (V
CC
= 5.0V+/-10%, T
A
= 25C)
AC Characteristics (V
CC
= 5.0V+/-10%, Vss=0V, T
A
= 0 ~ 70C, Notes 1, 2, 3,19,20)
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)
Symbol
Parameter
Note
C
I1
C
I2
C
I/O
Input Capacitance (Address)
Input Capacitance (Clocks)
Output Capacitance (Data-In/Out)
1
1
1, 2
Unit
pF
pF
pF
Max
5
7
7
Min
-
-
-
Input rise and fall times : 5ns
Input timing reference levels : 0.8V, 2.4V
Output timing reference levels : 0.4V, 2.4V
Output load : 2 TTL gate + C
L
(100pF)
(Including scope and jig)
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = V
IH
to disable D
OUT
.
Test Conditions
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
RC
90
-
110
-
130
-
t
RP
30
-
40
-
50
-
t
RAS
50
10,000
60
10,000
70
10,000
t
CAS
10,000
10,000
10,000
15
18
t
ASR
0
-
-
-
0
0
t
RAH
7
-
-
-
10
10
t
ASC
0
-
-
-
0
0
t
CAH
-
-
-
10
15
t
RCD
17
45
45
52
20
20
4
t
RAD
12
30
30
35
15
15
5
t
RSH
13
-
-
-
15
18
t
CSH
50
-
-
-
60
70
t
CRP
5
-
-
-
5
5
t
T
3
50
50
50
3
3
8
t
DZO
0
-
-
-
0
0
t
DZC
0
-
-
-
0
0
GM71C(S)16400
C/CL-5
13
-
-
-
15
18
6
7
7
t
CP
-
10
-
10
-
t
ODD
GM71C(S)16400
C/CL-6
GM71C(S)16400
C/CL-7
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
13
7
7
Random Read or Write Cycle Time
RAS Precharge Time
RAS Pulse Width
CAS Pulse Width
Row Address Set up Time
Row Address Hold Time
Column Address Set-up Time
Column Address Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
RAS Hold Time
CAS Hold Time
CAS to RAS Precharge Time
Transition Time (Rise and Fall)
OE Delay Time from D
IN
CAS Delay Time from D
IN
OE to D
IN
Delay Time
CAS Precharge Time
GM71C(S)16400C/CL
Rev 0.1 / Apr'01
Read Cycle
Max
Min
Max
Min
-
60
-
70
-
15
-
18
-
30
-
35
0
-
0
-
0
-
-
0
5
-
-
5
30
-
-
35
0
-
-
0
30
-
-
35
-
15
15
-
-
15
-
18
3
-
-
3
3
-
-
3
-
15
15
-
15
-
-
18
Access Time from RAS
Access Time from CAS
Access Time from Address
Read Command Setup Time
Read Command Hold Time to CAS
Read Command Hold Time to RAS
Column Address to RAS Lead Time
CAS to Output in low-Z
Column Address to CAS Lead Time
Output Buffer Turn-off Time
Access Time from OE
Output Data Hold Time
Output Data Hold Time from OE
Output Buffer Turn-off Time to OE
CAS to D
IN
Delay Time
GM71C(S)16400
C/CL-6
GM71C(S)16400
C/CL-7
Write Cycle
Max
Min
-
50
-
13
-
25
0
-
0
-
5
-
25
-
0
-
25
-
-
13
-
13
3
-
3
-
-
13
13
-
GM71C(S)16400
C/CL-5
Symbol
Symbol
Parameter
Parameter
Max
Min
Max
Min
0
-
0
-
10
-
15
-
10
-
10
-
15
-
18
-
15
-
-
18
0
-
-
0
t
RAC
t
CAC
t
AA
t
RCS
t
RCH
t
RRH
t
RAL
t
CLZ
t
CAL
t
OFF
t
OAC
t
OH
t
OHO
t
OEZ
t
CDD
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
10
-
-
15
Write Command Setup Time
Write Command Hold Time
Write Command Pulse Width
Data-in Setup Time
Data-in Hold Time
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Note
13
13
9,10,21
10,11,
18,21
10,12,
18,21
14
10
14
6
Note
16
16
15
GM71C(S)16400
C/CL-6
GM71C(S)16400
C/CL-7
Min
0
-
-
7
-
-
-
0
-
-
Max
GM71C(S)16400
C/CL-5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
7
13
13
7