The GM71V(S)17803C/CL is the new
generation dynamic RAM organized 2,097,152
x 8 bit. GM71V(S)17803C/CL has realized
higher density, higher performance and various
functions by utilizing advanced CMOS process
technology. The GM71V(S)17803C/CL offers
Extended Data out(EDO) Page Mode as a high
speed access mode. Multiplexed address inputs
p e r m i t t h e G M 7 1 V ( S ) 1 7 8 0 3 C / C L t o b e
packaged in standard 400 mil 28pin plastic SOJ,
and standard 400mil 28pin plastic TSOP II. The
package size provides high system bit densities
and is compatible with widely available
automated testing and insertion equipment.

Description

Features

* 2,097,152 Words x 8 Bit Organization
* Extended Data Out Mode Capability
* Single Power Supply (3.3V+/-0.3V)
* Fast Access Time & Cycle Time

(Unit: ns)

Pin Configuration

2,097,152 WORDS x 8 BIT

CMOS DYNAMIC RAM

GM71VS17803CL

28 TSOP II

(Top View)

28 SOJ

I/O0

I/O1

I/O2

I/O3

RAS

A10

I/O7

I/O6

I/O5

I/O4

CAS

I/O7

I/O6

I/O5

I/O4

CAS

I/O0

I/O1

I/O2

I/O3

RAS

A10

I/O7

I/O6

I/O5

I/O4

CAS

* Low Power
Active : 396/360/324mW (MAX)
Standby : 7.2mW (CMOS level : MAX)
0.36mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
*All inputs and outputs TTL Compatible
* 2048 Refresh Cycles/32ms
* 2048 Refresh Cycles/128ms (L-version)
* Self Refresh Operation (L-version)
* Battery Back Up Operation (L-version)

GM71V(S)17803C/CL-5
GM71V(S)17803C/CL-6

GM71V(S)17803C/CL-7

RAC

CAC

HPC

50
60

13
15

104

20
25

124

GM71V17803C

Rev 0.1 / Apr'01

GM71VS17803CL

GM71V17803C

Rev 0.1 / Apr'01

Pin Description

Pin

Function

Pin

Function

A0-A10

I/O0-I/O7

RAS

Address Inputs

Refresh Address Inputs

Data Input/ Data Output

Row Address Strobe

Read/Write Enable

Power (+3.3V)

Ground

No Connection

Ordering Information

CAS

Column Address Strobe

Output Enable

Absolute Maximum Ratings*

Type No.

Access Time

Package

GM71V(S)17803CJ/CLJ -5
GM71V(S)17803CJ/CLJ -6
GM71V(S)17803CJ/CLJ -7

50ns
60ns
70ns

400 Mil
28 Pin
Plastic SOJ

50ns
60ns
70ns

400 Mil
28 Pin
Plastic TSOP II

GM71V(S)17803CT/CLT -5
GM71V(S)17803CT/CLT -6
GM71V(S)17803CT/CLT -7

Note: All voltage referred to Vss.

Symbol

Parameter

Rating

Unit

STG

IN/OUT

OUT

0 ~ 70

-55 ~ 125

-0.5 ~ Vcc+0.5
(<=4.6V(MAX))

-0.5 ~ 4.6

Ambient Temperature under Bias

Storage Temperature

Voltage on any Pin Relative to V

Supply Voltage Relative to V

Short Circuit Output Current

1.0

Power Dissipation

Recommended DC Operating Conditions (T

= 0 ~ 70C)

Symbol

Parameter

Unit

Supply Voltage

Input High Voltage

Input Low Voltage

Max

3.6

+ 0.3

0.8

Typ

3.3

Min

3.0

2.0

-0.3

Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability.

GM71VS17803CL

GM71V17803C

Rev 0.1 / Apr'01

DC Electrical Characteristics (V

= 3.3V+/-0.3V, Vss = 0V, T

= 0 ~ 70C)

Symbol

Parameter

Note

Output Level
Output "H" Level Voltage (I

OUT

-2mA

)

Unit

Max

0.4

Min

2.4

Output Level
Output "L" Level Voltage (I

OUT

mA)

CC1

110

50ns

60ns

70ns

100

1, 2

CC2

Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = V

OUT

High-Z)

CC3

RAS Only Refresh Current
Average Power Supply Current
RAS Only Refresh Mode
(t

min)

CC4

1, 3

CC5

Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS

- 0.2V, D

OUT

= High-Z)

CC6

CAS-before-RAS Refresh Current
(t

min)

110

50ns

60ns

70ns

CC7

150

L(I)

-10

L(O)

-10

Input Leakage Current
Any Input (0V

4.6V)

Output Leakage Current
(D

OUT

is Disabled, 0V

OUT

<= 4.

6V)

Note: 1. I

depends on output load condition when the device is selected.

(max) is specified at the output open condition.

2. Address can be changed once or less while RAS = V

3. Address can be changed once or less while CAS = V

4. CAS = L (

0.2V) while RAS = L (

0.2V).

5. L -version.

Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling

min)

Standby Current RAS = V

CAS = V

OUT

Enable

EDO Page Mode Current
Average Power Supply Current
EDO Page Mode
(t

HPC

= t

HPC

min)

100

Battery Back Up Operating Current(Standby with CBR Ref.)
(CBR refresh, t

= 62.5us

RAS

0.3

us,

OUT

High-Z, CMOS Interface)

400

4,5

110

50ns

60ns

70ns

100

50ns

60ns

70ns

CC8

CC9

Self-Refresh Mode Current
(RAS, CAS<= 0.2V

OUT

High-Z, CMOS interface)

250

GM71VS17803CL

GM71V17803C

Rev 0.1 / Apr'01

Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

Max

Min

Random Read or Write Cycle Time

104

124

RAS Precharge Time

RAS

RAS Pulse Width

10,000

CAS

CAS Pulse Width

10,000

ASR

Row Address Set up Time

RAH

Row Address Hold Time

ASC

Column Address Set-up Time

CAH

Column Address Hold Time

RCD

RAS to CAS Delay Time

RAD

RAS to Column Address Delay Time

RSH

RAS Hold Time

CSH

CAS Hold Time

CRP

CAS to RAS Precharge Time

Transition Time (Rise and Fall)

Capacitance (V

= 3.3V+/-0.3V, T

= 25C)

Symbol

Parameter

Note

I/O

Input Capacitance (Address)

Input Capacitance (Clocks)

Output Capacitance (Data-In/Out)

1, 2

Unit

Max

Min

Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = V

to disable D

OUT

AC Characteristics (V

= 3.3V+/-0.3V, T

= 0 ~

70C, Note 1, 2, 18)

DZO

OE Delay Time from D

DZC

CAS Delay Time from D

GM71V(S)17803
C/CL-5

OE to D

Delay Time

CAS Precharge Time

ODD

Test Conditions

Input rise and fall times : 2 ns

Output timing reference levels : 0.8V, 2.0V

Input levels : VIL = 0V, VIH = 3V

Output load : 1TTL gate + C

(100 pF)

Input timing reference levels : 0.8V, 2.0V

(Including scope and jig)

GM71V(S)17803
C/CL-6

GM71V(S)17803
C/CL-7

GM71VS17803CL

GM71V17803C

Rev 0.1 / Apr'01

Read Cycle

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

RAC

CAC

Access Time from Address

RCS

Read Command Setup Time

RCH

Access Time from RAS

Access Time from CAS

Read Command Hold Time to CAS

8,9

9,10,17

9,11,17

Access Time from OE

GM71V(S)17803
C/CL-6

OAC

GM71V(S)17803
C/CL-7

RRH

RAL

Read Command Hold Time to RAS

OFF

Output Buffer Turn-off Time

Column Address to RAS Lead Time

CAL

Column Address to CAS Lead Time

CLZ

OEZ

CAS to Output in Low-Z

Output Buffer Turn-off Time to OE

Output Data Hold Time

OHO

Output Data Hold Time from OE

CDD

CAS to D

Delay Time

RCHR

OHR

OFR

WEZ

WDD

RDD

Output Data hold Time from RAS

Output Buffer turn off to RAS

Output Buffer turn off to WE

WE to D

Delay Time

RAS to D

Delay Time

Read Command Hold Time from RAS

Max

Min

GM71V(S)17803
C/CL-5

Электронный компонент: GM71VS17803C/CL-7