SPW24N60C3
CoolMOS
TM
Power Transistor
Features
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv /dt rated
Ultra low effective capacitances
Improved transconductance
Maximum ratings, at T
j
=25 C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 C
A
T
C
=100 C
Pulsed drain current
1)
I
D,pulse
T
C
=25 C
Avalanche energy, single pulse
E
AS
I
D
=12.1 A,
V
DD
=50 V
780
mJ
Avalanche energy, repetitive t
AR
1),2)
E
AR
I
D
=24.3 A, V
DD
=50 V
Avalanche current, repetitive t
AR
1)
I
AR
A
Drain source voltage slope
dv /dt
I
D
=24.3 A,
V
DS
=480 V, T
j
=125 C
V/ns
Gate source voltage
V
GS
static
V
V
GS
AC (f >1 Hz)
Power dissipation
P
tot
T
C
=25 C
W
Operating and storage temperature
T
j
, T
stg
C
1.5
24.3
50
Value
24.3
15.4
72.9
20
30
240
-55 ... 150
V
DS
@ T
j,max
650
V
R
DS(on),max
0.16
I
D
24.3
A
Product Summary
Type
Package
Ordering Code
Marking
SPW24N60C3
P-TO247
Q67040-S4640
24N60C3
P-TO247
Rev. 1.0
page 1
2004-04-27
SPW24N60C3
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
0.52
K/W
R
thJA
leaded
-
-
62
Soldering temperature
T
sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
C
Electrical characteristics, at T
j
=25 C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=250 A
600
-
-
V
Avalanche breakdown voltage
V
(BR)DS
V
GS
=0 V, I
D
=24.3 A
-
700
-
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=1.2 mA
2.1
3
3.9
Zero gate voltage drain current
I
DSS
V
DS
=600 V, V
GS
=0 V,
T
j
=25 C
-
0.1
1
A
V
DS
=600 V, V
GS
=0 V,
T
j
=150 C
-
-
100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
-
-
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=15.4 A,
T
j
=25 C
-
0.14
0.16
V
GS
=10 V, I
D
=15.4 A,
T
j
=150 C
-
0.34
-
Gate resistance
R
G
f =1 MHz, open drain
-
0.7
-
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=15.4 A
-
24
-
S
Values
Thermal resistance, junction -
ambient
Rev. 1.0
page 2
2004-04-27
SPW24N60C3
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
2800
-
pF
Output capacitance
C
oss
-
930
-
Reverse transfer capacitance
C
rss
-
66
-
Effective output capacitance, energy
related
3)
C
o(er)
-
114
-
Effective output capacitance, time
related
4)
C
o(tr)
-
204
-
Turn-on delay time
t
d(on)
-
13
-
ns
Rise time
t
r
-
21
-
Turn-off delay time
t
d(off)
-
73
-
Fall time
t
f
-
6
-
Gate Charge Characteristics
Gate to source charge
Q
gs
-
15
-
nC
Gate to drain charge
Q
gd
-
49
-
Gate charge total
Q
g
-
105
137
Gate plateau voltage
V
plateau
-
5.4
-
V
4)
C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS.
Values
V
GS
=0 V, V
DS
=25 V,
f =1 MHz
V
DD
=480 V,
V
GS
=10 V, I
D
=24.3 A,
R
G
=3.3
V
DD
=480 V,
I
D
=24.3 A,
V
GS
=0 to 10 V
V
GS
=0 V, V
DS
=0 V
to 480 V
1)
Pulse width limited by maximum temperature T
j,max
only
2)
Repetitive avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
3)
C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS.
Rev. 1.0
page 3
2004-04-27
SPW24N60C3
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Reverse Diode
Diode continuous forward current
I
S
-
-
24.3
A
Diode pulse current
I
S,pulse
-
-
72.9
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=24.3 A,
T
j
=25 C
-
0.96
1.2
V
Reverse recovery time
t
rr
-
600
-
ns
Reverse recovery charge
Q
rr
-
13
-
C
Peak reverse recovery current
I
rrm
-
70
-
A
Typical Transient Thermal Characteristics
V
R
=480 V, I
F
=I
S
,
di
F
/dt =100 A/s
T
C
=25 C
Values
5)
C
th6
models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if
R
thCA
=0 K/W.
Symbol
Value
Unit
Symbol
Value
Unit
typ.
typ.
R
th1
0.00705
K/W
C
th1
0.000231
Ws/K
R
th2
0.00972
C
th2
0.0014
R
th3
0.0546
C
th3
0.00197
R
th4
0.0906
C
th4
0.0112
R
th5
0.133
C
th5
0.0612
C
th6
4.4
5)
Rev. 1.0
page 4
2004-04-27
SPW24N60C3
1 Power dissipation
2 Safe operating area
P
tot
=f(T
C
)
I
D
=f(V
DS
); T
C
=25 C; D =0
parameter: t
p
3 Max. transient thermal impedance
4 Typ. output characteristics
I
D
=f(V
DS
); T
j
=25 C
I
D
=f(V
DS
); T
j
=25 C
parameter: D=t
p
/T
parameter: V
GS
0
50
100
150
200
250
0
40
80
120
160
T
C
[C]
P
tot
[W]
1 s
10 s
100 s
1 ms
10 ms
DC
10
3
10
2
10
1
10
0
10
2
10
1
10
0
10
-1
V
DS
[V]
I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
0
10
-1
10
-2
10
-3
t
p
[s]
Z
thJC
[K/W]
4 V
4.5 V
5 V
5.5 V
6 V
6.5 V
7 V
20 V
0
10
20
30
40
50
60
70
80
0
5
10
15
20
V
DS
[V]
I
D
[A]
Rev. 1.0
page 5
2004-04-27
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