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Электронный компонент: BA592

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Feb-04-2003
1
BA592/BA892...
Silicon RF Switching Diode
For band switching in TV/VTR tuners
and mobile applications
Very low forward resistance (typ. 0.45 @ 3 mA)
small capacitance
BA592
BA892/-02L
BA892-02V
1
2
Type
Package
Configuration
L
S
(nH)
Marking
BA592
BA892
BA892-02L
BA892-02V
SOD323
SCD80
TSLP-2-1
SC79
single
single
single, leadless
single
1.8
0.6
0.4
0.6
blue S
AA
AA
A
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
35
V
Forward current
I
F
100
mA
Junction temperature
T
j
150
C
Operating temperature range
T
op
-55 ... 125
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BA592
BA892, BA892-02V
BA892-02L
R
thJS
135
120
70
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Feb-04-2003
2
BA592/BA892...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 20 V
I
R
-
-
20
nA
Forward voltage
I
F
= 100 mA
V
F
-
-
1
V
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 0 V, f = 100 MHz
C
T
0.65
0.6
-
0.92
0.85
1
1.4
1.1
-
pF
Reverse parallel resistance
V
R
= 0 V, f = 100 MHz
R
P
-
100
-
k
Forward resistance
I
F
= 3 mA, f = 100 MHz
I
F
= 10 mA, f = 100 MHz
r
f
-
-
0.45
0.36
0.7
0.5
Charge carrier life time
I
F
= 10 mA, I
R
= 6 mA, measured at I
R
= 3mA,
R
L
= 100
rr
-
120
-
ns
I-region width
W
I
-
3
-
m
Insertion loss
1)
I
F
= 0.1 mA, f = 1 GHz
I
F
= 3 mA, f = 1 GHz
I
F
= 10 mA, f = 1 GHz
|S
21
|
2
-
-
-
-0.1
-0.05
-0.04
-
-
-
dB
Isolation
1)
V
R
= 0 V, f = 100 MHz
V
R
= 0 V, f = 470 MHz
V
R
= 0 V, f = 1 GHz
|S
21
|
2
-
-
-
-23.5
-10.5
-5.5
-
-
-
1
BA892-02L in series configuration,
Z
= 50
Feb-04-2003
3
BA592/BA892...
Diode capacitance C
T
=
(V
R
)
f = Parameter
0
5
10
15
20
V
30
V
R
0
0.4
0.8
1.2
pF
2
C
T
1 MHz ... 1 GHz
Reverse parallel resistance R
P
=
(V
R
)
f = Parameter
0
5
10
15
20
V
30
V
R
-1
10
0
10
1
10
2
10
3
10
KOhm
R
p
100 MHz
1 GHz
Forward resistance r
f
=
(I
F
)
f = 100MHz
10
-2
10
-1
10
0
10
1
10
2
mA
I
F
-1
10
0
10
1
10
2
10
Ohm
r
f
Forward current I
F
=
(V
F
)
T
A
= Parameter
0
0.2
0.4
0.6
0.8
V
1.2
V
F
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
I
F
-40 C
25 C
85 C
125 C
Feb-04-2003
4
BA592/BA892...
Insertion loss |S
21
|
2
=
(f)
I
F
= Parameter
BA892-02L in series configuration,
Z
= 50
0
0.5
1
1.5
2
GHz
3
f
-0.4
-0.3
-0.2
dB
0
|
S
21
|
2
10 mA
3 mA
1 mA
0.1 mA
Isolation |S
21
|
2
=
(f)
V
R
= Paramter
BA892-02L in series configuration,
Z
= 50
0
0.5
1
1.5
2
GHz
3
f
-30
-25
-20
-15
-10
dB
0
|
S
21
|
2
0 V
1 V
10 V