Feb-14-2003
1
BAR64...
Silicon PIN Diode
High voltage current controlled RF resistor
for RF attenuator and switches
Frequency range above 1 MHz up to 6 GHz
Very low capacitance at zero volt reverse bias
at frequencies above 1 GHz (typ. 0.17 pF)
Low forward resistance (typ. 2.1 @ 10 mA)
Very low signal distortion
BAR64-02L
BAR64-02V
BAR64-03W
BAR64-07
BAR64-04
BAR64-04T
BAR64-04W
BAR64-06
BAR64-06W
BAR64-05
BAR64-05W
1
2
1
D 2
2
3
4
D 1
3
1
D 2
2
D 1
3
1
D 2
2
D 1
3
1
D 2
2
D 1
Type
Package
Configuration
L
S
(nH)
Marking
BAR64-02L *
BAR64-02V
BAR64-03W
BAR64-04
BAR64-04T
BAR64-04W
BAR64-05
BAR64-05W
BAR64-06
BAR64-06W
BAR64-07
TSLP-2-1
SC79
SOD323
SOT23
SC75
SOT323
SOT23
SOT323
SOT23
SOD323
SOT143
single, leadless
single
single
series
series
series
common cathode
common cathode
common anode
common anode
parallel pair
0.4
0.6
1.8
1.8
1.2
1.4
1.8
1.4
1.8
1.4
2
MM
O
2 blue
PPs
PPs
PPs
PRs
PRs
PSs
PSs
PTs
* Preliminary Data
Feb-14-2003
2
BAR64...
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
150
V
Forward current
I
F
100
mA
Total power dissipation
BAR64-02L, T
S
135 C
BAR64-02V, T
S
125 C
BAR64-03W, BAR64-07, T
S
25 C
BAR64-04, -05, -06, T
S
65 C
BAR64-04T, T
S
109 C
BAR64-04W, -05W, -06W, T
S
115 C
P
tot
250
250
250
250
250
250
mW
Junction temperature
T
j
150
C
Operating temperature range
T
op
-55 ... 125
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAR64-02L
BAR64-02V, -04W, -05W, -06W
BAR64-03W
BAR64-04, -05, -06
BAR64-04T
BAR64-07
R
thJS
60
140
370
340
165
290
Electrical Characteristics at
T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 5 A
V
(BR)
150
-
-
V
Forward voltage
I
F
= 50 mA
V
F
-
-
1.1
1
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
Feb-14-2003
3
BAR64...
Electrical Characteristics at
T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Diode capacitance
V
R
= 20 V,
f = 1 MHz
V
R
= 0 V,
f = 100 MHz
V
R
= 0 V,
f = 1...1.8 GHz, BAR64-02L
V
R
= 0 V, f = 1...1.8 GHz, all other
C
T
-
-
-
-
0.23
0.3
0.13
0.17
0.35
-
-
-
pF
Reverse parallel resistance
V
R
= 0 V,
f = 100 MHz
V
R
= 0 V,
f = 1 GHz
V
R
= 0 V,
f = 1.8 GHz
R
P
-
-
-
10
4
3
-
-
-
k
Forward resistance
I
F
= 1 mA,
f = 100 MHz
I
F
= 10 mA,
f = 100 MHz
I
F
= 100 mA,
f = 100 MHz
r
f
-
-
-
12.5
2.1
0.85
20
2.8
1.35
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA, measured at
I
R
= 3 mA,
R
L
= 100
rr
-
1550
-
ns
I-region width
W
I
-
50
-
m
Insertion loss
1)
I
F
= 3 mA,
f = 1.8 GHz
I
F
= 5 mA,
f = 1.8 GHz
I
F
= 10 mA,
f = 1.8 GHz
|
S
21
|
2
-
-
-
-0.32
-0.23
-0.16
-
-
-
dB
Isolation
1)
V
R
= 0 V,
f = 0.9 GHz
V
R
= 0 V,
f = 1.8 GHz
V
R
= 0 V,
f = 2.45 GHz
V
R
= 0 V,
f = 5.6 GHz
|
S
21
|
2
-
-
-
-
-22
-17
-14.5
-8.5
-
-
-
-
1
BAR64-02L in series configuration,
Z
= 50
Feb-14-2003
4
BAR64...
Diode capacitance
C
T
=
(V
R
)
f = Parameter
0
2
4
6
8
10
12
14
16 V
20
V
R
0.1
0.2
0.3
0.4
0.5
pF
0.7
C
T
1 MHz
100 MHz
1 GHz
1.8 GHz
Reverse parallel resistance
R
P
=
(V
R
)
f = Parameter
0
5
10
15
20
25
30
V
40
V
R
-1
10
0
10
1
10
2
10
3
10
4
10
KOhm
R
p
100 MHz
1 GHz
1.8 GHz
Forward resistance
r
f
=
(I
F
)
f = 100MHz
10
-2
10
-1
10
0
10
1
10
2
mA
I
F
-1
10
0
10
1
10
2
10
3
10
Ohm
R
F
Forward current
I
F
=
(V
F
)
T
A
= Parameter
0
0.2
0.4
0.6
0.8
V
1.2
V
F
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
I
F
-40 C
25 C
85 C
125 C
Feb-14-2003
5
BAR64...
Intermodulation intercept point
IP
3
=
(I
F
);
f = Parameter
10
-1
10
0
10
1
mA
I
F
1
10
2
10
dBm
IP
3
f=1800MHz
f=900MHz
Forward current
I
F
=
(T
S
)
BAR64-02L
0
30
60
90
120
C
165
T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
Forward current
I
F
=
(T
S
)
BAR64-02V
0
15
30
45
60
75
90 105 120 C
150
T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
Forward current
I
F
=
(T
S
)
BAR64-04, BAR64-06
0
15
30
45
60
75
90 105 120 C
150
T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
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