Feb-04-2003
1
BAR65...
Silicon PIN Diode
Series diode for mobile communication in
low loss transmit-receiver switches
Band switch for TV-tuners
Very low forward resistance (typ. 0.65 @ 5 mA)
Low capacitance (typ. 0.5 pF @ 0V)
Fast switching applications
BAR65-02L
BAR65-02V
BAR65-03W
BAR65-07
1
2
1
D 2
2
3
4
D 1
Type
Package
Configuration
L
S
(nH)
Marking
BAR65-02L *
BAR65-02V
BAR65-03W
BAR65-07
TSLP-2-1
SC79
SOD323
SOT143
single, leadless
single
single
parallel pair
0.4
0.6
1.8
2
NN
N
M/blue
Ms
* Preliminary Data
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
30
V
Forward current
I
F
100
mA
Total power dissipation
BAR65-02L, T
S
128C
BAR65-02V, T
S
118C
BAR65-03W, T
S
113C
BAR65-07, T
S
57C
P
tot
250
250
250
250
mW
Junction temperature
T
j
150
C
Operating temperature range
T
op
-55 ... 125
Storage temperature
T
stg
-55 ... 150
Feb-04-2003
2
BAR65...
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAR65-02L
BAR65-02V
BAR65-03W
BAR65-07
R
thJS
90
130
145
370
K/W
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 20 V
I
R
-
-
20
nA
Forward voltage
I
F
= 100 mA
V
F
-
0.93
1
V
1
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
Feb-04-2003
3
BAR65...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 0 V, f = 100 MHz ... 1.8 GHz
C
T
-
-
-
0.45
0.4
0.5
0.9
0.8
-
pF
Reverse parallel resistance
V
R
= 0 V, f = 100 MHz
V
R
= 0 V, f = 1 GHz
V
R
= 0 V, f = 1.8 GHz
R
P
-
-
-
700
10
5
-
-
-
k
Forward resistance
I
F
= 1 mA, f = 100 MHz
I
F
= 5 mA, f = 100 MHz
I
F
= 10 mA, f = 100 MHz
r
f
-
-
-
1
0.65
0.56
-
0.95
0.9
Charge carrier life time
I
F
= 10 mA, I
R
= 6 mA, measured at I
R
= 3 mA,
R
L
= 100
rr
-
80
-
ns
I-region width
W
I
-
3.5
-
m
Insertion loss
1)
I
F
= 1 mA, f = 1.8 GHz
I
F
= 5 mA, f = 1.8 GHz
I
F
= 10 mA, f = 1.8 GHz
|S
21
|
2
-
-
-
-0.08
-0.06
-0.05
-
-
-
dB
Isolation
1)
V
R
= 0 V, f = 0.9 GHz
V
R
= 0 V, f = 1.8 GHz
V
R
= 0 V, f = 2.45 GHz
|S
21
|
2
-
-
-
-12
-7
-5
-
-
-
1
BAR65-02L in series configuration,
Z
= 50
Feb-04-2003
4
BAR65...
Diode capacitance C
T
=
(V
R
)
f = Parameter
0
2
4
6
8
10
12
14
16 V
20
V
R
0.1
0.15
0.2
0.25
0.3
0.35
0.4
F
0.5
C
T
1 MHz ... 1.8 GHz
Reverse parallel resistance R
P
=
(V
R
)
f = Parameter
0
2
4
6
8
10
12
14
16 V
20
V
R
-1
10
0
10
1
10
2
10
3
10
4
10
KOhm
R
p
100 MHz
1 GHz
1.8 GHz
Forward resistance r
f
=
(I
F
)
f = 100MHz
10
-2
10
-1
10
0
10
1
10
2
mA
I
F
-1
10
0
10
1
10
Ohm
r
f
Forward current I
F
=
(V
F
)
T
A
= Parameter
0
0.2
0.4
0.6
0.8
V
1.2
V
F
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
I
F
-40 C
25 C
85 C
125 C
Feb-04-2003
5
BAR65...
Forward current I
F
=
(T
S
)
BAR65-02L
0
15
30
45
60
75
90 105 120 C
150
T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
Forward current I
F
=
(T
S
)
BAR65-02V
0
15
30
45
60
75
90 105 120 C
150
T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
Forward current I
F
=
(T
S
)
BAR65-03W
0
15
30
45
60
75
90 105 120 C
150
T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
Forward current I
F
=
(T
S
)
BAR65-07
0
15
30
45
60
75
90 105 120 C
150
T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
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