Feb-04-2003
1
BAR67...
Silicon PIN Diode
For low loss RF switches and attenuators
Very low capacitance at zero volt reverse
bias at frequencies above 1 GHz (typ. 0.25 pF)
Low forward resistance (typ. 1.5
@ 5mA)
Low harmonics
BAR67-02V
1
2
Type
Package
Configuration
L
S
(nH)
Marking
BAR67-02V
SC79
single
0.6
T
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
150
V
Forward current
I
F
200
mA
Total power dissipation
T
S
118C
P
tot
250
mW
Junction temperature
T
j
150
C
Operating temperature range
T
op
-55 ... 125
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
, BAR67-02V
R
thJS
115
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Feb-04-2003
2
BAR67...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 5 A
V
(BR)
150
-
-
V
Reverse current
V
R
= 100 V
I
R
-
-
20
nA
Forward voltage
I
F
= 50 mA
V
F
-
0.95
1.2
V
AC Characteristics
Diode capacitance
V
R
= 5 V, f = 1 MHz
V
R
= 0 V, f = 100 MHz
V
R
= 0 V, f = 1 GHz
V
R
= 0 V, f = 1.8 GHz
C
T
-
-
-
-
0.35
0.35
0.25
0.23
0.55
0.9
-
-
pF
Reverse parallel resistance
V
R
= 0 V, f = 100 MHz
V
R
= 0 V, f = 1 GHz
V
R
= 0 V, f = 1.8 GHz
R
P
-
-
-
25
4
2.5
-
-
-
k
Forward resistance
I
F
= 5 mA, f = 100 MHz
I
F
= 10 mA, f = 100 MHz
r
f
-
-
1.5
1
1.8
-
Charge carrier life time
I
F
= 10 mA, I
R
= 6 mA, measured at I
R
= 3 mA,
R
L
= 100
rr
-
700
-
ns
I-region width
W
I
-
13
-
m
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