BAR67-03W
Jul-09-2001
1
Silicon PIN Diode
Low loss RF switch
RF attenuator
Low series capacitance and resistance
VPS05176
1
2
Type
Marking
Pin Configuration
Package
BAR67-03W
Blue T
1=C
2=A
SOD323
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
150
V
Forward current
I
F
200
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
R
thJS
130
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BAR67-03W
Jul-09-2001
2
Electrical Characteristics at T
A
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 5 A
V
(BR)
150
-
-
V
Reverse current
V
R
= 100 V
I
R
-
-
20
nA
Forward voltage
I
F
= 50 mA
V
F
-
0.95
1.2
V
AC Characteristics
Diode capacitance
V
R
= 35 V, f = 1 MHz
V
R
= 0 V, f = 100 MHz
C
T
-
-
0.4
0.35
0.6
0.9
pF
Forward resistance
I
F
= 5 mA, f = 100 MHz
r
f
-
1.5
1.8
Zero bias conductance
V
R
= 0 V, f = 100 MHz
g
p
-
220
-
S
Charge carrier life time
I
F
= 10 mA, I
R
= 6 mA, I
R
= 3 mA
rr
-
0.7
-
s
Series inductance
L
s
-
1.8
-
nH
PDF 
ZIP