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Электронный компонент: BAR89-02L

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Jul-15-2003
1
BAR89...
Silicon PIN Diode
 Optimized for antenna switches
in hand held applications
Very low capacitance at zero volts reverse bias
at frequencies above 1GHz (typ. 0.19 pF)
Low forward resistance (typ. 0.8 @ I
F
= 10mA)
Very low signal distortion
BAR89-02L
1
2
Type
Package
Configuration
L
S
(nH)
Marking
BAR89-02L
TSLP-2-1
single, leadless
0.4
RS
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
80
V
Forward current
I
F
100
mA
Total power dissipation
T
s
133C
P
tot
250
mW
Junction temperature
T
j
150
C
Operating temperature range
T
op
-55 ... 125
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
, BAR89-02L
R
thJS
65
K/W
1
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
Jul-15-2003
2
BAR89...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 5 A
V
(BR)
80
-
-
V
Reverse current
V
R
= 60 V
I
R
-
-
50
nA
Forward voltage
I
F
= 10 mA
I
F
= 100 mA
V
F
-
-
0.83
0.95
0.9
1.1
V
Jul-15-2003
3
BAR89...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 0 V, f = 100 MHz
V
R
= 0 V, f = 1 GHz
V
R
= 0 V, f = 1.8 GHz
C
T
-
-
-
-
0.25
0.25
0.19
0.18
0.35
-
-
-
pF
Reverse parallel resistance
V
R
= 0 V, f = 100 MHz
V
R
= 0 V, f = 1 GHz
V
R
= 0 V, f = 1.8 GHz
R
P
-
-
-
35
5
3.5
-
-
-
k
Forward resistance
I
F
= 1 mA, f = 100 MHz
I
F
= 5 mA, f = 100 MHz
I
F
= 10 mA, f = 100 MHz
r
f
-
-
-
3
1.2
0.8
-
-
1.5
Charge carrier life time
I
F
= 10 mA, I
R
= 6 mA, measured at I
R
= 3 mA,
R
L
= 100
rr
-
800
-
ns
I-region width
W
I
-
19
-
m
Insertion loss
1)
I
F
= 1 mA, f = 1.8 GHz
I
F
= 5 mA, f = 1.8 GHz
I
F
= 10 mA, f = 1.8 GHz
|S
21
|
2
-
-
-
-0.23
-0.1
-0.08
-
-
-
dB
Isolation
1)
V
R
= 0 V, f = 0.9 GHz
V
R
= 0 V, f = 1.8 GHz
V
R
= 0 V, f = 2.45 GHz
|S
21
|
2
-
-
-
-19
-14
-11
-
-
-
1
BAR89-02L in series configuration,
Z
= 50
Jul-15-2003
4
BAR89...
Diode capacitance C
T
=
(V
R
)
f = Parameter
0
2
4
6
8
10
12
14
16 V
20
V
R
0.1
0.15
0.2
0.25
0.3
0.35
0.4
pF
0.5
C
T
1 MHz
100 MHz
1 GHz
1.8 GHz
Reverse parallel resistance R
P
=
(V
R
)
f = Parameter
0
2
4
6
8
10
12
14
16 V
20
V
R
-1
10
0
10
1
10
2
10
3
10
KOhm
R
p
100 MHz
1 GHz
1.8 GHz
Forward resistance r
f
=
(I
F
)
f = 100MHz
10
-2
10
-1
10
0
10
1
10
2
10
3
mA
I
F
-1
10
0
10
1
10
2
10
3
10
Ohm
r
f
Forward current I
F
=
(V
F
)
T
A
= Parameter
0
0.2
0.4
0.6
0.8
V
1.2
VF
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
IF
-40C
+25C
+85C
+125C
Jul-15-2003
5
BAR89...
Forward current I
F
=
(T
S
)
BAR89-02L
0
15
30
45
60
75
90 105 120 C
150
T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
Permissible Puls Load R
thJS
=
(t
p
)
BAR89-02L
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
C
t
p
-1
10
0
10
1
10
2
10
mA
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/ I
FDC
=
(t
p
)
BAR89-02L
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
C
t
p
0
10
1
10
2
10
mA
IF
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Insertion loss |S
21
|
2
=
(f)
I
F
= Parameter
BAR89-02L in series configuration,
Z
= 50
0
1
2
3
4
GHz
6
f
-0.4
-0.35
-0.3
-0.25
-0.2
-0.15
-0.1
dB
0
|
S
21
|
10mA
5mA
1mA