BAS 125
Oct-19-1999
1
Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
Integrated diffused guard ring
Low forward voltage
1
2
3
VPS05161
BAS 125-04
BAS 125
BAS 125-05
BAS 125-06
EHA07004
1
3
2
EHA07005
1
3
2
EHA07006
1
3
2
1
3
EHA07002
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BAS 125
BAS 125-04
BAS 125-05
BAS 125-06
13s
14s
15s
16s
1 = A
1 = A1
1 = A1
1 = C1
2 = n.c.
2 = C2
2 = A2
2 = C2
3 = C
3 = C1/A2
3 = C1/2
3 = A1/2
SOT-23
SOT-23
SOT-23
SOT-23
Maximum Ratings
Parameter
Symbol
Unit
Value
Diode reverse voltage
V
R
V
25
Forward current
I
F
100
mA
Surge forward current (t
< 100s)
I
FSM
500
Total power dissipation
T
S
= 59 C BAS 125
T
S
= 34 C BAS 125-04 -05 -06
P
tot
250
250
mW
Junction temperature
C
T
j
150
T
stg
Storage temperature
-55 ... 150
BAS 125
Oct-19-1999
2
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - ambient
1)
BAS 125
K/W
R
thJA
445
Junction - ambient
1)
BAS 125-04 -05 -06
R
thJA
625
Junction - soldering point BAS 125
R
thJS
365
465
Junction - soldering point BAS 125-04 -05 -06
R
thJS
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 20 V
V
R
= 25
I
R
-
-
-
-
100
150
nA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 35 mA
V
F
-
-
-
385
530
800
400
650
950
mV
AC Characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
-
-
1.1
pF
Differential forward resistance
I
F
= 5 mA, f = 10 kHz
R
F
-
15
-
Forward voltage matching
2)
I
F
= 10 mA
V
F
-
-
20
mV
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
2)
VF is the difference between the lowest and the highest VF in the component
BAS 125
Oct-19-1999
3
Forward current I
F
= f (V
F
)
T
A
= Parameter
0.0
10
EHD07115
BAS 125...
F
F
V
-2
-1
10
0
10
1
10
10
2
mA
-40C
T
A
=
C
25
150 C
C
85
1.0
0.5
V
Forward current I
F
= f (T
A
*, T
S
)
*Package mounted on alumina
BAS 125-04, -05, -06
0
C
0
EHD07119
BAS 125...
F
A
T ; T
S
50
100
150
20
40
60
80
mA
100
T
A
S
T
Reverse current I
R
= f (V
R
)
T
A
= Parameter
0
10
EHD07116
BAS 125...
R
R
V
-3
-2
10
-1
10
0
10
10
1
A
20
10
V
T
A
= 125 C
C
= 85
A
T
T
A
= 25 C
Forward current I
F
= f (T
A
*, T
S
)
*Package mounted on alumina
BAS 125
EHD07123
BAS 125
100
mA
F
60
40
0
0
50
100
150
T
T
S
A
;
A
S
T
T
20
80
C
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