Jun-03-2003
1
BAS16...
Silicon Switching Diode
For high-speed switching applications
BAS16-07L4
BAS16S
BAS16U
BAS16-02L
BAS16-02V
BAS16-02W
BAS16-03W
BAS16
BAS16W
!
,
!
"
#
$
,
, !
,
!
"
,
Type
Package
Configuration
Marking
BAS16
BAS16S
BAS16U
BAS16W
BAS16-02L*
BAS16-02V
BAS16-02W
BAS16-03W
BAS16-07L4*
SOT23
SOT363
SC74
SOT323
TSLP-2-1
SC79
SCD80
SOD323
TSLP-4-4
single
parallel triple
parallel triple
single
single, leadless
single
single
single
parallel pair, leadless
A6s
A6s
A6s
A6s
A6
6
A6
B
6A
* Preliminary Data
Jun-03-2003
2
BAS16...
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
80
V
Peak reverse voltage
V
RM
85
Forward current
BAS16
BAS16-02L
BAS16-02V, BAS16-02W
BAS16-03W
BAS16S
BAS16U
BAS16W
BAS16-07L4
I
F
250
200
200
250
200
200
250
200
mA
Surge forward current
t = 1 s, BAS16/ S/ U/ W/ -03W
t = 1 s, BAS16-02L/ -02V/ -02W/ -07L4
I
FSM
4.5
2.5
Total power dissipation
BAS16, T
S
54 C
BAS16-02L, T
S
130 C
BAS16-02V, BAS16-02W, T
S
120 C
BAS16-03W, T
S
116 C
BAS16S, T
S
85 C
BAS16U, T
S
113 C
BAS16W, T
S
119 C
BAS16-07L4, T
S
tbd
P
tot
370
250
250
250
250
250
250
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Jun-03-2003
3
BAS16...
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAS16, BAS16S
BAS16-02L
BAS16-02V, BAS16-02W
BAS16-03W
BAS16U
BAS16W
BAS16-07L4
R
thJS
260
80
120
135
150
125
tbd
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
85
-
-
V
Reverse current
V
R
= 75 V
V
R
= 25 V, T
A
= 150 C
V
R
= 75 V, T
A
= 150 C
I
R
-
-
-
-
-
-
0.1
30
50
A
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
mV
Forward recovery voltage
I
F
= 10 mA, t
P
= 20 ns
V
fr
-
-
1.75
V
Jun-03-2003
4
BAS16...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
-
-
2
pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, measured at I
R
= 1mA ,
R
L
= 100
t
rr
-
-
4
ns
Test circuit for reverse recovery time
EHN00017
F
D.U.T.
Oscillograph
Pulse generator: t
p
= 100ns, D = 0.05, t
r
= 0.6ns,
R
i
= 50
Oscillograph: R = 50
,
t
r
= 0.35ns, C = 0.05pF
Jun-03-2003
5
BAS16...
Reverse current I
R
=
(T
A
)
V
R
= Parameter
0
25
50
75
100
C
150
T
A
1
10
2
10
3
10
4
10
5
10
nA
I
R
70 V
25 V
Forward Voltage V
F
=
(T
A
)
I
F
= Parameter
0
0.5
1.0
0
50
100
150
BAS 16
EHB00025
V
T
A
V
F
C
F
= 100 mA
10 mA
1 mA
0.1 mA
Forward current I
F
=
(V
F
)
T
A
= 25C
0
0
EHB00023
BAS 16
0.5
1.0
V
1.5
50
100
mA
150
F
F
V
max
typ
Peak forward current I
FM
=
(t
p
)
T
A
= 25C
BAS16
10
EHB00024
FM
t
-2
-6
10
D = 0.005
0.01
0.02
T
D = T
BAS 16
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
-1
10
0
10
1
10
2
10
A
t
p
t
p
0.05
0.1
0.2
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