Feb-21-2003
1
BAS28...
Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes
BAS28/W
1
D 2
2
3
4
D 1
Type
Package
Configuration
Marking
BAS28
BAS28W
SOT143
SOT343
parallel pair
parallel pair
JTs
JTs
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
80
V
Peak reverse voltage
V
RM
85
Forward current
I
F
200
mA
Surge forward current, t = 1 s
I
FS
4.5
A
Total power dissipation
BAS28, T
S
31C
BAS28W, T
S
103C
P
tot
330
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAS28
BAS28W
R
thJS
360
190
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Feb-21-2003
2
BAS28...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
85
-
-
V
Reverse current
V
R
= 75 V
V
R
= 25 V, T
A
= 150 C
V
R
= 75 V, T
A
= 150 C
I
R
-
-
-
-
-
-
0.1
30
50
A
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
mV
AC Characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
-
-
2
pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, measured at I
R
= 1mA ,
R
L
= 100
t
rr
-
-
4
ns
Test circuit for reverse recovery time
EHN00019
F
D.U.T.
Oscillograph
Pulse generator: t
p
= 100ns, D = 0.05,
t
r
= 0.6ns, R
i
= 50
Oscillograph: R = 50
, t
r
= 0.35ns,
C
1pF
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