Nov-04-2002
1
BAS52...
Silicon Schottky Diode
Medium current rectifier Schottky diode
Low forward voltage at 200mA
High reverse voltage
BAS52-02V
1
2
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Configuration
Marking
BAS52-02V
SC79
single
y
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
45
V
Forward current
I
F
750
mA
Surge forward current (t = 100s)
I
FSM
2000
Average forward current (50/60Hz, sinus)
I
FAV
500
Total power dissipation
T
S
110C
P
tot
500
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
R
thJS
60
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Nov-04-2002
2
BAS52...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 45 V
V
R
= 5 V, T
A
= 70 C
V
R
= 10 V
V
R
= 10 V, T
A
= 85 C
I
R
-
-
-
-
-
-
-
-
10
30
1
80
A
Forward voltage
I
F
= 10 mA
I
F
= 100 mA
I
F
= 200 mA
V
F
-
-
400
335
430
500
420
530
600
mV
AC Characteristics
Diode capacitance
V
R
= 10 V, f = 1 MHz
C
T
-
5
10
pF
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