BAS79A...BAS79D
Aug-20-2001
1
Silicon Switching Diodes
Switching applications
High breakdown voltage
Common cathode
VPS05163
1
2
3
4
EHA00005
1
2, 4
3
Type
Marking
Pin Configuration
Package
BAS79A
BAS79B
BAS79C
BAS79D
BAS 79A
BAS 79B
BAS 79C
BAS 79D
1 = A1
1 = A1
1 = A1
1 = A1
2=C1/2
2=C1/2
2=C1/2
2=C1/2
3 = A2
3 = A2
3 = A2
3 = A2
4=C1/2
4=C1/2
4=C1/2
4=C1/2
SOT223
SOT223
SOT223
SOT223
Maximum Ratings
Parameter
Symbol
BAS
79A
BAS
79B
BAS
79C
BAS
79D
Unit
Diode reverse voltage
V
R
50
100
200
400
V
Peak reverse voltage
V
RM
50
100
200
400
Forward current
I
F
1
A
Peak forward current
I
FM
1
Surge forward current, t = 1
s
I
FS
10
Total power dissipation
, T
S
= 114 C
P
tot
1.2
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
30
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BAS79A...BAS79D
Aug-20-2001
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I
(BR)
= 100 A
BAS79A
BAS79B
BAS79C
BAS79D
V
(BR)
50
100
200
400
-
-
-
-
-
-
-
-
V
Forward voltage
I
F
= 1 A
I
F
= 2 A
V
F
-
-
-
-
1.6
2
Reverse current
V
R
= V
Rmax
I
R
-
-
1
A
Reverse current
V
R
= V
Rmax
, T
A
= 150 C
I
R
-
-
50
AC characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
D
-
10
-
pF
Reverse recovery time
I
F
= 200 mA, I
R
= 200 mA, R
L
= 100
,
measured at I
R
= 200mA
t
rr
-
1
-
s
Test circuit for reverse recovery time
EHN00021
F
DUT
90%
10%
R
V
R
t
t
t
t
rr
p
r
t
= 20 mA
F
Oscillograph
Pulse generator: t
p
= 10s, D = 0.05,
t
r
= 0.6ns, R
i
= 50
Oscillograph: R = 50
, t
r
= 0.35ns,
C
1pF
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