Feb-03-2003
1
BAT17...
Silicon Schottky Diode
For mixer applications in VHF/UHF range
For high-speed switching application
BAT17
BAT17-07
BAT17-04
BAT17-04W
BAT17-06
BAT17-06W
BAT17-05
BAT17-05W
3
1
2
1
D 2
2
3
4
D 1
3
1
D 2
2
D 1
3
1
D 2
2
D 1
3
1
D 2
2
D 1
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Configuration
L
S
(nH)
Marking
BAT17
BAT17-04
BAT17-04W
BAT17-05
BAT17-05W
BAT17-06
BAT17-06W
BAT17-07
SOT23
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT143
single
series
series
common cathode
common cathode
common anode
common anode
parallel pair
1.8
1.8
1.4
1.8
1.4
1.8
1.4
2
53s
54s
54s
55s
55s
56s
56s
57s
Feb-03-2003
2
BAT17...
Maximum Ratings
at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
4
V
Forward current
I
F
130
mA
Total power dissipation
BAT17, T
S
77C
BAT17-04, BAT17-06, T
S
61C
BAT17-05,T
S
46C
BAT17-04W, -05W, -6W, T
S
92 C
BAT17-07, T
S
60 C
P
tot
150
150
150
150
150
mW
Junction temperature
T
j
150
C
Operating temperature range
T
op
-55 ... 125
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAT17
BAT17-04, BAT17-06, BAT17-07
BAT17-05
BAT17-04W, BAT17-05W, BAT17-06W
R
thJS
490
590
690
390
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Feb-03-2003
3
BAT17...
Electrical Characteristics
at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 10 A
V
(BR)
4
-
-
V
Reverse current
V
R
= 3 V
V
R
= 4 V
V
R
= 3 V, T
A
= 60 C
I
R
-
-
-
-
-
-
0.25
10
1.25
A
Forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
V
F
200
250
350
275
340
425
350
450
600
mV
Forward voltage matching
1)
I
F
= 1 mA
V
F
-
-
20
AC Characteristics
Diode capacitance
V
R
= 0 , f = 1 MHz
C
T
0.4
0.55
0.75
pF
Differential forward resistance
I
F
= 5 mA, f = 10 kHz
R
F
-
8
15
1
V
F
is the difference between lowest and highest
V
F
in multiple diode component.
Feb-03-2003
4
BAT17...
Diode capacitance C
T
=
(V
R
)
f = 1MHz
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
R
0.1
0.2
0.3
0.4
pF
0.6
C
T
Forward resistance r
f
=
(I
F
)
f = 10kHz
10
EHD07109
r
f
F
-1
0
10
1
10
2
10
mA
0
10
10
3
10
1
10
2
Reverse current I
R
=
(V
R
)
T
A
= Parameter
0.0
V
10
EHD07107
R
R
V
-3
-2
10
-1
10
0
10
1
10
2
10
A
1.0
2.0
3.0
4.0
T
A
=150 C
C
85
25
C
Forward current I
F
=
(V
F
)
T
A
= Parameter
0.0
10
EHD07106
F
F
V
-2
-1
10
0
10
1
10
10
2
mA
-40 C
0.1
0.2
0.3
0.4
0.5 V 0.6
T
A
=
25
150
85
C
C
C
Feb-03-2003
5
BAT17...
Forward current I
F
=
(T
S
)
BAT17
0
15
30
45
60
75
90 105 120 C
150
TS
0
20
40
60
80
100
mA
140
I F
Forward current I
F
=
(T
S
)
BAT17-04, BAT17-06, BAT17-07
0
15
30
45
60
75
90 105 120 C
150
T
S
0
20
40
60
80
100
mA
140
I
F
Forward current I
F
=
(T
S
)
BAT17-05
0
15
30
45
60
75
90 105 120 C
150
T
S
0
20
40
60
80
100
mA
140
I
F
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