BAT17-07
Jul-31-2001
1
Silicon Schottky Diode
For mixer applications in the VHF / UHF range
For high-speed switching applications
VPS05178
2
1
3
4
3
2
EHA07008
1
4
Type
Marking
Pin Configuration
Package
BAT17-07
57s
1 = C1
2 = C2
3 = A2
4 = A1
SOT143
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
4
V
Forward current
I
F
130
mA
Total power dissipation
, T
S
60 C
P
tot
150
mW
Junction temperature
T
j
150
C
Operating temperature range
T
op
-55 ... 150
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
590
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BAT17-07
Jul-31-2001
2
Electrical Characteristics at T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I
(BR)
= 10 A
V
(BR)
4
-
-
V
Reverse current
V
R
= 3 V
V
R
= 4 V
I
R
-
-
-
-
0.25
10
A
Reverse current
V
R
= 3 V, T
A
= 60 C
I
R
-
-
1.25
Forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
V
F
200
250
350
275
340
425
350
450
600
mV
AC characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
-
pF
0.75
1
Differential forward resistance
I
F
= 5 mA, f = 10 kHz
r
f
-
8
15
PDF 
ZIP
