BAT 18-04S
Dec-16-1999
1
Silicon PIN Diode
Preliminary data
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance
VPS05604
6
3
1
5
4
2
EHA07464
6
5
4
3
2
1
C1/A2
C3
A4
A3/C4
C2
A1
D1
D4
D2
D3
Type
Marking
Pin Configuration
Package
BAT 18-04S
AVs
1=A1 2=C2 3=A3/C4 4=A4 5=A3 6=C1/A2 SOT-363
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
35
V
Forward current
I
F
100
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Junction - ambient
1)
R
thJA
tbd
K/W
Junction - soldering point
R
thJS
tbd
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
BAT 18-04S
Dec-16-1999
2
Electrical Characteristics at T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 20 V
I
R
-
-
20
nA
Reverse current
V
R
= 20 V, T
A
= 60 C
I
R
-
-
200
A
Forward voltage
I
F
= 50 mA
V
F
-
0.88
1.2
V
AC characteristics
Diode capacitance
V
R
= 20 V, f = 1 MHz
C
T
-
0.75
1
pF
Forward resistance
I
F
= 5 mA, f = 100 MHz
r
f
-
0.4
0.7
Series inductance
L
s
-
1.4
-
nH
Diode capacitance
C
T
= f (V
R
)
f
= 1MHz
0
0.0
EHD07019
BAT 18...
C
T
R
V
10
20
V
30
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
pF
2.0
Forward resistance
r
f
= f (I
F
)
f
= 100MHz
10
EHD07020
BAT 18...
r
f
F
-1
0
10
1
10
2
10
mA
-1
10
10
1
10
0
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