Jul-24-2002
1
BAT63-07WE6811
Silicon Schottky Diode
Low barrie diode for detectors up to GHz
frequencies
For high-speed switching applications
Zero bias detector diode
BAT63-07W
1
D 2
2
3
4
D 1
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Configuration
L
S
(nH) Marking
BAT63-07WE6811
SOT343
parallel pair
1.6
63s
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
8
V
Forward current
I
F
100
mA
Total power dissipation
T
S
103 C
P
tot
100
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
R
thJS
470
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Jul-24-2002
2
BAT63-07WE6811
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse voltage
I
R
= 100 A
V
R
8
10
-
V
Forward voltage
I
F
= 1 mA
V
F
-
190
300
mV
AC Characteristics
Diode capacitance
V
R
= 0.2 V, f = 1 MHz
C
T
-
0.65
0.85
pF
Differential resistance
V
R
= 0 V, f = 10 kHz
R
0
-
30
-
k
Jul-24-2002
3
BAT63-07WE6811
Diode capacitance C
T
=
(V
R
)
f
= 1MHz
0
0.5
1
1.5
2
V
3
V
R
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
pF
1
C
T
Forward current I
F
=
(V
F
)
T
A
= Parameter
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V
1
V
F
-4
10
-3
10
-2
10
-1
10
A
I
F
TA=125C
TA=85C
TA=25C
TA=-40C
Forward current I
F
=
(T
S
)
0
15
30
45
60
75
90 105 120 C
150
T
S
0
20
40
60
80
mA
120
I
F
Permissible Puls Load R
thJS
=
(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
C
t
p
1
10
2
10
3
10
mA
R
thJS
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
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