Feb-14-2003
1
BAT66...
Silicon Schottky Diode
Power rectifier diode
For low-loss, fast-recovery rectification,
meter protection, bias isolation and
clamping purpose
BAT66-05
3
1
D 2
2
D 1
4
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Configuration
Marking
BAT66-05
SOT223
common cathode
BAT66-05
Maximum Ratings
at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
30
V
Forward current
I
F
2
A
Surge forward current, (t
10ms)
I
FSM
10
Average forward current (50/60Hz, sinus)
I
FAV
1
Total power dissipation
T
S
126C
P
tot
1.2
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
R
thJS
20
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Feb-14-2003
2
BAT66...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 25 V
V
R
= 25 V, T
A
= 85 C
I
R
-
-
-
-
10
1000
A
Forward voltage
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1 A
V
F
-
-
-
0.28
0.35
0.47
0.35
-
0.6
V
AC Characteristics
Diode capacitance
V
R
= 10 V, f = 1 MHz
C
T
-
30
40
pF
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