BAT 68-07
Oct-07-1999
1
Silicon Schottky Diodes
For mixer applications in the VHF / UHF range
For high-speed switching applications
VPS05178
2
1
3
4
3
2
EHA07008
1
4
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BAT 68-07
87s
1 = C1
2 = C2
3 = A2
4 = A1
SOT-143
Maximum Ratings
Symbol
Value
Parameter
Unit
Diode reverse voltage
8
V
V
R
I
F
130
Forward current
mA
Total power dissipation
, T
S
60 C
150
mW
P
tot
T
j
150
Junction temperature
C
-55 ... 150
Storage temperature
T
stg
Thermal Resistance
Junction - ambient
1)
R
thJA
750
K/W
Junction - soldering point
590
R
thJS
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm)
BAT 68-07
Oct-07-1999
2
Electrical Characteristics at T
A
= 25 C, unless otherwise specified.
Parameter
Values
Symbol
Unit
max.
min.
typ.
DC characteristics
Breakdown voltage
I
(BR)
= 10 A
V
(BR)
-
8
V
-
I
R
-
0.1
A
-
Reverse current
V
R
= 1 V
I
R
-
-
Reverse current
V
R
= 1 V, T
A
= 60 C
1.2
V
F
-
-
-
-
340
500
mV
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
AC characteristics
-
1
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
pF
-
10
Rf
-
Differential forward resistance
I
F
= 5 mA, f = 10 kHz
-
PDF 
ZIP
