BAT68
Aug-17-2001
1
Silicon Schottky Diodes
For mixer applications in the VHF / UHF range
For high-speed switching applications
1
2
3
VPS05161
BAT68-05
BAT68-06
BAT68-04
BAT68
EHA07004
1
3
2
EHA07005
1
3
2
EHA07006
1
3
2
1
3
EHA07002
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BAT68
BAT68-04
BAT68-05
BAT68-06
83s
84s
85s
86s
1 = A
1 = A1
1 = A1
1 = C1
2 n.c.
2 = C2
2 = A2
2 = C2
3 = C
3 = C1/A2
3 = C1/2
3 = A1/2
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
8
V
Forward current
I
F
130
mA
Total power dissipation
T
S
77 C; BAT68
T
S
61 C; BAT68-04/BAT68-06
T
S
46 C; BAT68-05
P
tot
150
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Junction - soldering point
1)
BAT68
BAT68-04/BAT68-06
BAT68-05
R
thJS
90
590
690
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BAT68
Aug-17-2001
2
Electrical Characteristics at T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I
(BR)
= 10 A
V
(BR)
8
-
-
V
Reverse current
V
R
= 1 V
I
R
-
-
0.1
A
Reverse current
V
R
= 1 V, T
A
= 60 C
I
R
-
-
1.2
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F
-
-
-
-
340
500
mV
AC characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
-
-
1
pF
Differential forward resistance
I
F
= 5 mA, f = 10 kHz
Rf
-
-
10
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