Aug-20-2001
1
BAV170
1
2
3
VPS05161
Silicon Low Leakage Diode Array
Low-leakage applications
Medium speed switching times
Common cathode
EHA07004
1
3
2
Type
Marking
Pin Configuration
Package
BAV170
JXs
1 = A1
2 = A2
3 = C1/2
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
70
V
Peak reverse voltage-
V
RM
70
Forward current
I
F
200
mA
Surge forward current, t = 1 s
I
FS
4.5
A
Total power dissipation
T
S
= 35 C
P
tot
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
R
thJS
460
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Aug-20-2001
2
BAV170
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
70
-
-
V
Reverse current
V
R
= 70 V
V
R
= 70 V, T
A
= 150 C
I
R
-
-
-
-
5
80
nA
Forward voltage
I
F
= 1 mV
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
900
1000
1100
1250
mV
AC Characteristics
Diode capacitance-
V
R
= 0 V, f = 1 MHz
C
T
-
2
-
pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, measured at I
R =
1 mA,
R
L
= 100
t
rr
-
0.5
3
s
Test circuit for reverse recovery time
EHN00019
F
D.U.T.
Oscillograph
Puls generator: t
p
= 10s, D = 0.05,
t
r
= 0.6ns, R
i
= 50
Oscillograph: R = 50
, t
r
= 0.35ns,
C
1pF
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