Feb-21-2003
1
BAV70...
Silicon Switching Diode
For high-speed switching applications
Common cathode configuration
BAV70S
BAV70U
BAV70
BAV70L3
BAV70T
BAV70W
3
1
D 2
2
D 1
1
D 1
2
3
4
5
6
D 2
D 3
D 4
Type
Package
Configuration
Marking
BAV70
BAV70L3 **
BAV70S
BAV70T
BAV70U
BAV70W
SOT23
TSLP-3-1
SOT363
SC75
SC74
SOT323
common cathode
common cathode, leadless
double common cathode
common cathode
double common cathode
common cathode
A4s
A4
A4s
A4s
A4s
A4s
** Target Data
Feb-21-2003
2
BAV70...
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
80
V
Peak reverse voltage
V
RM
85
Forward current
I
F
200
mA
Surge forward current, t = 1 s
I
FS
4.5
A
Total power dissipation
BAV70, T
S
35C
BAV70L3, T
S
=tbd
BAV70S, T
S
85C
BAV70T, T
S
73C
BAV70U, T
S
90C
BAV70W, T
S
103C
P
tot
250
250
250
250
250
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAV70
BAV70L3
BAV70S
BAV70T
BAV70U
BAV70W
R
thJS
460
tbd
260
310
240
190
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Feb-21-2003
3
BAV70...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
85
-
-
V
Reverse current
V
R
= 70 V
V
R
= 25 V, T
A
= 150 C
V
R
= 70 V, T
A
= 150 C
I
R
-
-
-
-
-
-
0.15
30
50
A
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
mV
AC Characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
-
-
1.5
pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, measured at I
R
= 1mA ,
R
L
= 100
t
rr
-
-
4
ns
Test circuit for reverse recovery time
EHN00019
F
D.U.T.
Oscillograph
Pulse generator: t
p
= 100ns, D = 0.05, t
r
= 0.6ns,
R
i
= 50
Oscillograph: R = 50
t
r
= 0.35ns, C = 0.05pF
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