BAV74
Jul-31-2001
1
Silicon Switching Diode Array
For high-speed switching applications
Common cathode
1
2
3
VPS05161
EHA07004
1
3
2
Type
Marking
Pin Configuration
Package
BAV74
JAs
1 = A1
2 = A2
3 = C1/2
SOT23
Maximum Ratings
Parameter
Value
Symbol
Unit
V
Diode reverse voltage
V
R
50
Peak reverse voltage
50
V
RM
I
F
200
mA
Forward current
A
4.5
Surge forward current, t = 1
s
I
FS
Total power dissipation
, T
S
= 35 C
P
tot
250
mW
T
j
150
Junction temperature
C
-65 ... 150
Storage temperature
T
stg
Thermal Resistance
Junction - soldering point
1)
R
thJS
460
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BAV74
Jul-31-2001
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Values
Symbol
Unit
typ.
max.
min.
DC characteristics
V
-
-
V
(BR)
50
Breakdown voltage
I
(BR)
= 100 A
Forward voltage
I
F
= 100 mA
1
-
-
V
F
A
Reverse current
V
R
= 50 V
I
R
0.1
-
-
100
-
-
I
R
Reverse current
V
R
= 50 V, T
A
= 150 C
AC characteristics
pF
2
-
-
C
D
Diode capacitance
V
R
= 0 V, f = 1 MHz
ns
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, R
L
= 100
,
measured at I
R
= 1mA
4
t
rr
-
-
Test circuit for reverse recovery time
EHN00019
F
D.U.T.
Oscillograph
Pulse generator: t
p
= 100ns, D = 0.05,
t
r
= 0.6ns, R
i
= 50
Oscillograph: R = 50
, t
r
= 0.35ns,
C
1pF
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