BAW 100
Oct-08-1999
1
Silicon Switching Diode Array
For high-speed switching applications
Electrical insulated diodes
VPS05178
2
1
3
4
3
2
EHA00006
1
4
Type
Marking
Pin Configuration
Package
BAW 100
JSs
1 = A1
2 = A2
3 = C2
4 = C1
SOT-143
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
75
V
Peak reverse voltage
V
RM
85
Forward current
I
F
200
mA
Surge forward current, t = 1
s
I
FS
4.5
A
Total power dissipation
, T
S
= 31 C
P
tot
330
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - ambient
1)
R
thJA
500
K/W
Junction - soldering point
R
thJS
360
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
BAW 100
Oct-08-1999
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
85
-
-
V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
715
855
1000
1250
mV
Reverse current
V
R
= 75 V
I
R
-
-
1
A
Reverse current
V
R
= 25 V, T
A
= 150 C
V
R
= 75 V
I
R
-
-
-
-
30
50
AC characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
D
-
-
2
pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, R
L
= 100
,
measured at I
R
= 1mA
t
rr
-
-
6
ns
Test circuit for reverse recovery time
EHN00019
F
D.U.T.
Oscillograph
Pulse generator: t
p
= 100ns, D = 0.05,
t
r
= 0.6ns, R
i
= 50
Oscillograph: R = 50
, t
r
= 0.35ns,
C
1pF
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