Feb-03-2003
1
BAW101...
Silicon Switching Diode
Electrically insulated high-voltage
medium-speed diodes
BAW101
1
D 2
2
3
4
D 1
Type
Package
Configuration
Marking
BAW101
SOT143
parallel
JPs
Maximum Ratings
at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
300
V
Peak reverse voltage
V
RM
300
Forward current
I
F
250
mA
Peak forward current
I
FM
500
Surge forward current, t = 1 s
I
FS
4.5
A
Total power dissipation
T
S
35C
P
tot
350
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAW101
R
thJS
330
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Feb-03-2003
2
BAW101...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
300
-
-
V
Reverse current
V
R
= 250 V
V
R
= 250 V, T
A
= 150 C
I
R
-
-
-
-
0.15
50
A
Forward voltage
I
F
= 100 mA
V
F
-
-
1.3
V
AC Characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
-
6
-
pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, measured at I
R
= 1mA,
R
L
= 100
t
rr
-
1
-
s
Test circuit for reverse recovery time
EHN00019
F
D.U.T.
Oscillograph
Pulse generator: t
p
= 10
s, D = 0.05, t
r
= 0.6ns,
R
i
= 50
Oscillograph: R = 50
, t
r
= 0.35ns, C
1pF
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