BAW78M
Aug-21-2001
1
Silicon Switching Diode
Switching applications
High breakdown voltage
VPW05980
1
2
3
5
4
Type
Marking
Pin Configuration
Package
BAW78M
GDs
1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT595
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
400
V
Peak reverse voltage
V
RM
400
Forward current
I
F
1
A
Peak forward current
I
FM
1
Surge forward current, t = 1
s
I
FS
10
Total power dissipation
, T
S
110 C
P
tot
1
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
40
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BAW78M
Aug-21-2001
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
400
-
-
V
Forward voltage
I
F
= 1 A
I
F
= 2 A
V
F
-
-
-
-
1.6
2
Reverse current
V
R
= 400 V
I
R
-
-
1
A
Reverse current
V
R
= 400 V, T
A
= 150 C
I
R
-
-
50
AC characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
D
-
10
-
pF
Reverse recovery time
I
F
= 200 mA, I
R
= 200 mA, R
L
= 100
,
measured at I
R
= 20mA
t
rr
-
1
-
s
Test circuit for reverse recovery time
EHN00019
F
D.U.T.
Oscillograph
Pulse generator: t
p
= 10s, D = 0.05,
t
r
= 0.6ns, R
i
= 50
Oscillograph: R = 50
, t
r
= 0.35ns,
C
1pF
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