BAW 78M
Oct-08-1999
1
Silicon Switching Diode
Preliminary data
Switching applications
High breakdown voltage
VPW05980
1
2
3
5
4
Type
Marking
Pin Configuration
Package
BAW 78M
GDs
1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT-595
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
400
V
Peak reverse voltage
V
RM
400
Forward current
I
F
1
A
Peak forward current
I
FM
1
Surge forward current, t = 1
s
I
FS
10
Total power dissipation
, T
S
110 C
P
tot
1
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - ambient
1)
R
thJA
95
K/W
Junction - soldering point
R
thJS
40
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
BAW 78M
Oct-08-1999
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
400
-
-
V
Forward voltage
I
F
= 1 A
I
F
= 2 A
V
F
-
-
-
-
1.6
2
Reverse current
V
R
= 400 V
I
R
-
-
1
A
Reverse current
V
R
= 400 V, T
A
= 150 C
I
R
-
-
50
AC characteristics
-
pF
C
D
10
-
Diode capacitance
V
R
= 0 V, f = 1 MHz
Reverse recovery time
I
F
= 200 mA, I
R
= 200 mA, R
L
= 100
,
measured at I
R
= 20mA
t
rr
-
1
-
s
Test circuit for reverse recovery time
EHN00019
F
D.U.T.
Oscillograph
Pulse generator: t
p
= 100ns, D = 0.05,
t
r
= 0.6ns, R
i
= 50
Oscillograph: R = 50
, t
r
= 0.35ns,
C
1pF
BAW 78M
Oct-08-1999
3
Forward current I
F
= f (T
A
*;T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
200
400
600
800
mA
1200
I
F
T
S
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
200
400
600
800
mA
1200
I
F
T
A
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
200
400
600
800
mA
1200
I
F
Permissible Pulse Load
I
Fmax
/ I
FDC
= f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load R
thJS
= f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
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