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Электронный компонент: BB640E6433

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Nov-07-2002
1
BB640...
Silicon Variable Capacitance Diode
For Hyperband TV / VTR tuners, Bd l
BB640
1
2
Type
Package
Configuration
L
S
(nH) Marking
BB640
SOD323
single
1.8
red S
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
30
V
Peak reverse voltage
( R
5k )
V
RM
35
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
Nov-07-2002
2
BB640...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 30 V
V
R
= 30 V, T
A
= 85 C
I
R
-
-
-
-
10
200
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
62
47.5
2.85
2.8
69
54.5
3.28
3.05
76
61.5
3.7
3.3
pF
Capacitance ratio
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T1
/C
T28
19.5
-
25
Capacitance ratio
V
R
= 2 V, V
R
= 25 V, f = 1 MHz
C
T2
/C
T25
15
16.6
-
Capacitance matching
1)
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T
/C
T
-
-
2.5
%
Series resistance
C
T
= 12 pF, f = 100 MHz
r
S
-
1.15
-
1
For details please refer to Application Note 047.
Nov-07-2002
3
BB640...
Diode capacitance C
T
=
(V
R
)
f
= 1MHz
10
EHD07045
C
T
R
V
-1
0
10
1
10
2
10
V
0
10
20
30
40
50
60
70
80
90
pF
100
Temperature coefficient of the diode
capacitance
T
Cc
=
(V
R
)
10
0
10
1
10
2
V
V
R
-5
10
-4
10
-3
10
1/C
T
Cc
Reverse current I
R
=
(T
A
)
V
R
= 28V
0
10
20
30
40
50
60
70
80 C
100
T
A
0
50
100
150
200
pA
300
I
R
Reverse current I
R
=
(V
R
)
T
A
= Parameter
0
4
8
12
16
20
24 V
30
V
R
-13
10
-12
10
-11
10
-10
10
-9
10
I
R
0C
85C