Jun-01-2004
1
BB644 /BB664...
Silicon Variable Capacitance Diodes
For VHF TV-tuners
High capacitance ratio
Low series inductance
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB644
BB664/-02V
1
2
Type
Package
Configuration
L
S
(nH)
Marking
BB644
BB664
BB664-02V
SOD323
SCD80
SC79
single
single
single
1.8
0.6
0.6
yellow 4
44
4
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
30
V
Peak reverse voltage
R
5k
V
RM
35
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
Jun-01-2004
2
BB644 /BB664...
Electrical Characteristics at
T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 85 C
I
R
-
-
-
-
10
100
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
39
29.4
2.5
2.4
41.8
31.85
2.7
2.55
44.5
34.2
2.85
2.75
pF
Capacitance ratio
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T1
/C
T28
15
16.4
17.8
Capacitance ratio
V
R
= 2 V, V
R
= 25 V, f = 1 MHz
C
T2
/C
T25
11
11.8
12.6
Capacitance matching
1)
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T
/C
T
-
-
2
%
Series resistance
V
R
= 5 V, f = 470 MHz
r
S
-
0.6
0.75
1
For details please refer to Application Note 047.
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