Mar-27-2003
1
BB669/BB689...
Silicon Tuning Diode
For VHF 2-Band-hyperband-TV-tuners
Very high capacitance ratio
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB669
BB689
BB689-02V
1
2
Type
Package
Configuration
L
S
(nH)
Marking
BB669
BB689
BB689-02V
SOD323
SCD80
SC79
single
single
Single
1.8
0.6
0.6
1
EE
E
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
30
V
Peak reverse voltage
( R
5k )
V
RM
35
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
Mar-27-2003
2
BB669/BB689...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 30 V
V
R
= 30 V, T
A
= 85 C
I
R
-
-
-
-
10
200
nA
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
51
39.6
2.6
2.5
56.5
43.4
2.8
2.7
61.5
47.2
3
2.9
pF
Capacitance ratio
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T1
/C
T28
18
20.9
23.2 -
Capacitance ratio
V
R
= 2 V, V
R
= 25 V, f = 1 MHz
C
T2
/C
T25
14.5
15.5
17
Capacitance matching
1)
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T
/C
T
-
-
2
%
Series resistance
V
R
= 8 V, f = 470 MHz
r
S
-
0.85
-
1
For details please refer to Application Note 047
PDF 
ZIP