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Электронный компонент: BB814

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Dec-04-2002
1
BB814...
Silicon Variable Capacitance Diodes
For FM radio tuners with extended
frequency band
High tuning ratio at low supply voltage (car radio)
Monolithic chip (common cathode) for perfect
dual diode tracking
Coded capacitance groups and group matching
available
BB814
3
1
D 2
2
D 1
Type
Package
Configuration
L
S
(nH)
Marking
BB814
SOT23
common cathode
1.8
SH1/2*
*For differences see next page Capacitance groups
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
18
V
Peak reverse voltage-
V
RM
20
Forward current
I
F
50
mA
Operating temperature range
T
op
-55 ... 125
C
Storage temperature
T
stg
-55 ... 150
Dec-04-2002
2
BB814...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 16 V
V
R
= 16 V, T
A
= 60 C
I
R
-
-
-
-
20
200
nA
AC Characteristics
Diode capacitance
1)
V
R
= 2 V, f = 1 MHz
V
R
= 8 V, f = 1 MHz
C
T
43
19.1
44.75
20.8
46.5
22.7
pF
Capacitance ratio
V
R
= 2 V, V
R
= 8 V, f = 1 MHz
C
T2
/C
T8
2.05
2.15
2.25
Capacitance matching
2)
V
R
= 2 V, V
R
= 8 V, f = 1 MHz
C
T
/C
T
-
-
3
%
Series resistance
V
R
= 2 V, f = 100 MHz
r
S
-
0.18
-
Q factor
f
= 100 MHz, V
R
= 2 V
Q
-
200
-
1
Capacitance groups at 2V and 8V, coded 1; 2
C
T
/groups 1 2
C
2V
min 43pF 44.5pF
C
2V
max 45pF 46.5pF
C
8V
min 19.1pF 19.75pF
C
8V
max 21.95pF 22.7pF
2
For details please refer to Application Note 047.
Dec-04-2002
3
BB814...
Diode capacitance C
T
=
(V
R
)
f
= 1MHz
10
EHD07054
BB 814
C
T
R
V
-1
0
10
1
10
2
10
V
0
10
20
30
40
50
60
70
pF
80
Capacitance ratio C
Tref
/C
T
=
(V
R
)
f
= 1MHz
0
0
EHD07057
BB 814
C
T
R
V
Tref
C
5
10
15
V
20
1
2
3
4
5
6
V
ref
= 1 V
2 V
3 V