Nov-07-2002
1
BB831...
Silicon Variable Capacitance Diodes
Frequency range up to 2 GHz
Special design for use in TV-sat indoor unit
BB831
1
2
Type
Package
Configuration
L
S
(nH) Marking
BB831
SOD323
single
1.8
white T
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
30
V
Peak reverse voltage
( R
5k )
V
RM
35
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 125
C
Storage temperature
T
stg
-55 ... 150
Nov-07-2002
2
BB831...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 30 V
V
R
= 30 V, T
A
= 85 C
I
R
-
-
-
-
20
500
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
7.8
0.85
8.8
1.02
9.8
1.2
pF
Capacitance ratio
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T1
/C
T28
7.8
8.6
9.5
Capacitance matching
1)
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T
/C
T
-
-
3
%
Series resistance
V
R
= 1 V, f = 100 MHz
r
S
-
1
-
1
For details please refer to Application Note 047.
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