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Электронный компонент: BB833

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Nov-07-2002
1
BB833...
Silicon Tuning Diodes
Extended frequency range up to 2.5 GHz;
spezial design for use in TV-sat indoor units
High capacitance ratio
BB833
1
2
Type
Package
Configuration
L
S
(nH) Marking
BB833
SOD323
single
1.8
white X
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
30
V
Peak reverse voltage-
R
5k
V
RM
35
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
Nov-07-2002
2
BB833...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 30 V
V
R
= 30 V, T
A
= 85 C
I
R
-
-
-
-
20
500
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
8.5
0.6
9.3
0.75
10
0.9
pF
Capacitance ratio
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T1
/C
T28
11
12.4
-
Capacitance matching
1)
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T
/C
T
-
-
3
%
Series resistance
V
R
= 1 V, f = 470 MHz
r
S
-
1.8
-
1
For details please refer to Application Note 047.
Nov-07-2002
3
BB833...
Diode capacitance C
T
=
(V
R
)
f
= 1MHz
10
0
EHD07121
BB 833
C
V
R
T
0
1
10
2
10
V
2
4
6
8
10
pF
12
Temperature coefficient of the diode
capacitance
T
Cc
=
(V
R
)
10
-1
10
0
10
1
10
2
V
V
R
-5
10
-4
10
-3
10
1/C
T
Cc