BB 835
Sep-18-2000
1
Silicon Tuning Diode
Extended frequency range up to 2.8 GHz
special design for use in TV-sat indoor units
High capacitance ratio
VPS05176
1
2
Type
Marking
Pin Configuration
Package
BB 835
yellow X
1 = C
2 = A
SOD-323
Maximum Ratings
Parameter
Value
Symbol
Unit
V
V
R
30
Diode reverse voltage
Peak reverse voltage (R
5k)
V
RM
35
20
mA
Forward current
I
F
Operating temperature range
-55 ... 150
T
op
C
T
stg
-55 ... 150
Storage temperature
BB 835
Sep-18-2000
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 30 V
I
R
-
-
10
nA
Reverse current
V
R
= 30 V, T
A
= 85 C
I
R
-
-
200
AC characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
8.5
0.5
pF
10
0.75
9.1
0.62
Capacitance ratio
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
14.7
-
-
C
T1
/C
T28
13.5
-
3
%
-
C
T
/C
T
Capacitance matching
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
Series resistance
V
R
= 1 V, f = 470 MHz
r
s
-
-
2.4
-
nH
Series inductance
L
s
-
1.8
1) In-line matching. For details please refer to Application Note 047
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