Nov-14-2002
1
BB867...
Silicon Tuning Diode
For SAT - Indor units
High capacitance ratio C
1V
/C
25V
(typ.15.8)
Low series inductance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB867-02V
1
2
Type
Package
Configuration
L
S
(nH)
Marking
BB867-02V*
SC79
single
0.6
Y
* Preliminary
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
30
V
Peak reverse voltage-
(R
5k )
V
RM
35
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
Nov-14-2002
2
BB867...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 30 V
V
R
= 30 V, T
A
= 85 C
I
R
-
-
-
-
10
200
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
8
0.5
0.45
8.7
0.55
0.52
9.4
0.6
-
pF
Capacitance ratio
V
R
= 1 V, V
R
= 25 V, f = 1 MHz
C
T1
/C
T25
14
15.8
-
-
Capacitance ratio
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T1
/C
T28
-
16.7
-
Capacitance matching
1)
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
C
T
/C
T
-
-
5
%
Series resistance
V
R
= 5 V, f = 470 MHz
r
S
-
2.8
-
1
For details please refer to Application Note 047
PDF 
ZIP