Dec-15-2003
1
BBY51...
Silicon Tuning Diode
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation
For VCO's in mobile communications equipment
BBY51
BBY51-02L
BBY51-02W
BBY51-03W
3
1
D 2
2
D 1
1
2
Type
Package
Configuration
L
S
(nH)
Marking
BBY51
BBY51-02L*
BBY51-02W
BBY51-03W
SOT23
TSLP-2-1
SCD80
SOD323
common cathode
single, leadless
single
single
2
0.4
0.6
1.8
S3s
II
II
H
* Preliminary
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
7
V
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 125
C
Storage temperature
T
stg
-55 ... 150
Dec-15-2003
2
BBY51...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 6 V
V
R
= 6 V, T
A
= 85 C
I
R
-
-
-
-
10
200
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
C
T
5.05
3.4
2.7
2.5
5.4
4.2
3.5
3.1
5.75
5.2
4.6
3.7
pF
Capacitance ratio
V
R
= 1 V, V
R
= 4 V, f = 1 MHz
C
T1
/C
T4
1.55
1.75
2.2
Capacitance difference
V
R
= 1 V, f = 1 MHz, V
R
= 4 V
C
1V
-C
3V
1.4
1.78
2.2
pF
Capacitance difference
V
R
= 3 V, f = 1 MHz, V
R
= 4 V
C
3V
-C
4V
0.3
0.5
0.7
Series resistance
V
R
= 1 V, f = 1 GHz
r
S
-
0.37
-
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