BBY 51-07
Oct-05-1999
1
Silicon Tuning Diode
High Q hyperabrupt dual tuning diode
Designed for low tuning voltage operation
For VCO's in mobile communications equipment
VPS05178
2
1
3
4
Type
Marking
Pin Configuration
Package
BBY 51-07
HHs
1 = C1
2 = C2
3 = A2
4 = A1
SOT-143
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
7
V
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
BBY 51-07
Oct-05-1999
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 6 V
I
R
-
-
10
nA
Reverse current
V
R
= 6 V, T
A
= 150 C
I
R
-
-
100
AC characteristics
pF
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
5.3
4.2
3.5
3.1
4.8
3.6
2.9
2.6
C
T
6
5
4.2
3.5
-
Capacitance ratio
V
R
= 1 V, V
R
= 4 V, f = 1 MHz
1.55
2.15
1.75
C
T1
/C
T4
pF
C
1V
-C
3V
Capacitance difference
V
R
= 1 V, V
R
= 3 V, f = 1 MHz
2.2
1.78
1.4
C
3V
-C
4V
Capacitance difference
V
R
= 3 V, V
R
= 4 V, f = 1 MHz
0.3
0.7
0.5
Series resistance
V
R
= 1 V, f = 1 GHz
0.37
-
r
s
-
Case capacitance
f
= 1 MHz
C
C
-
0.12
pF
-
2
-
Series inductance
L
s
nH
-
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