Oct-24-2002
1
BBY52...
Silicon Tuning Diodes
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation
For VCO's in mobile communications equipment
BBY52-02L
BBY52-02W
1
2
Type
Package
Configuration
L
S
(nH) Marking
BBY52-02L*
BBY52-02W
TSLP-2-1
SCD80
single, leadless
single
0.4
0.6
K
KK
* Preliminary
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
7
V
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
Oct-24-2002
2
BBY52...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 6 V
V
R
= 6 V, T
A
= 85 C
I
R
-
-
-
-
10
200
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
C
T
1.4
0.95
0.9
0.85
1.85
1.5
1.35
1.15
2.2
2
1.75
1.45
pF
Capacitance ratio
V
R
= 1 V, V
R
= 4 V, f = 1 MHz
C
T1
/C
T4
1.1
1.6
2.1
Series resistance
V
R
= 1 V, f = 1 GHz
r
S
-
0.9
1.7
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