BBY 52
Oct-05-1999
1
Silicon Tuning Diode
High Q hyperabrupt dual tuning diode
Designed for low tuning voltage operation
For VCO's in mobile communications equipment
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
BBY 52
S5s
1 = A1
2 = A2
3 = C1/2 SOT-23
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
7
V
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
BBY 52
Oct-05-1999
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 6 V
I
R
-
-
10
nA
Reverse current
V
R
= 6 V, T
A
= 150 C
I
R
-
-
100
AC characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
C
T
1.4
-
-
0.85
pF
1.85
1.5
1.35
1.15
2.2
-
-
1.45
-
1.1
C
T1
/C
T4
2.1
1.6
Capacitance ratio
V
R
= 1 V, V
R
= 4 V, f = 1 MHz
Series resistance
V
R
= 1 V, f = 1 GHz
r
s
-
0.9
1.8
Case capacitance
f
= 1 MHz
C
C
-
0.12
-
pF
Series inductance
L
s
-
2
-
nH
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