Dec-04-2002
1
BBY53...
Silicon Tuning Diode
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
High ratio at low reverse voltage
BBY53-02L
BBY53-02V
BBY53-02W
BBY53-03W
BBY53
BBY53-05W
1
2
3
1
D 2
2
D 1
Type
Package
Configuration
L
S
(nH)
Marking
BBY53
BBY53-02L*
BBY53-02V
BBY53-02W
BBY53-03W
BBY53-05W
SOT23
TSLP-2-1
SC79
SCD80
SOD323
SOT323
common cathode
single, leadless
single
single
single
common cathode
2
0.4
0.6
0.6
1.8
1.4
S7s
LL
L
LL
white/5
S7s
* Preliminary
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
6
V
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 125
C
Storage temperature
T
stg
-55 ... 150
Dec-04-2002
2
BBY53...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 4 V
V
R
= 4 V, T
A
= 85 C
I
R
-
-
-
-
10
200
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
C
T
4.8
1.85
5.3
2.4
5.8
3.1
pF
Capacitance ratio
V
R
= 1 V, V
R
= 3 V, f = 1 MHz
C
T1
/C
T3
1.8
2.2
2.6
Series resistance
V
R
= 1 V, f = 1 GHz
r
S
-
0.47
-
PDF 
ZIP