Nov-14-2002
1
BBY55...
Silicon Tuning Diodes
Excellent linearity
High Q hyperabrupt tuning diode
Low series resistance
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
Very low capacitance spread
BBY55-02V
BBY55-02W
BBY55-03W
1
2
Type
Package
Configuration
L
S
(nH)
Marking
BBY55-02V
BBY55-02W
BBY55-03W
SC79
SCD80
SOD323
single
single
single
0.6
0.6
1.8
7
77
7 white
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
16
V
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
Nov-14-2002
2
BBY55...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 15 V
V
R
= 15 V, T
A
= 85 C
I
R
-
-
-
-
3
100
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
V
R
= 10 V, f = 1 MHz
C
T
17.5
14
11.6
10
5.5
18.6
15
12.6
11
6
19.6
16
13.6
12
6.5
pF
Capacitance ratio
V
R
= 2 V, V
R
= 10 V, f = 1 MHz
C
T2
/C
T10
2
2.5
3
Series resistance
V
R
= 5 V, f = 470 MHz
r
S
-
0.15
0.4
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