BBY55-05W
Jul-12-2001
1
Silicon Tuning Diode
Excellent linearity
High Q hyperabrupt tuning diode
Low series inductance
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
Very low capacitance spread
1
3
VSO05561
2
EHA07179
3
1
2
A1
A2
C1/C2
Type
Marking
Pin Configuration
Package
BBY55-05W
C5s
1=A1
2=A2
3=C1/C2
SOT323
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
16
V
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
BBY55-05W
Jul-12-2001
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 15 V
I
R
-
-
3
nA
Reverse current
V
R
= 15 V, T
A
= 65 C
I
R
-
-
100
AC Characteristics
Diode capacitance
V
R
= 2 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
V
R
= 10 V, f = 1 MHz
C
T
14
10
5.5
15
11
6
16
12
6.5
pF
Capacitance ratio
V
R
= 2 V, V
R
= 10 V, f = 1 MHz
C
T2/
C
T10
2
2.5
3
-
Series resistance
V
R
= 5 V, f = 470 MHz
r
s
-
0.15
0.4
Case capacitance
f
= 1 MHz
C
C
-
0.1
-
pF
Series inductance
L
s
-
1.4
-
nH
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