BBY 57-03W
Aug-03-1998
1
Silicon Tuning Diode
Excellent linearity
High Q hyperabrupt tuning diode
Low series inductance
High capacitance ratio
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For control elements such as TCXOs and VCXOs
VPS05176
1
2
Type
Marking
Pin Configuration
Package
BBY 57-03W
5 cathd.red 1 = C
2 = A
SOD-323
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
10
V
mA
Forward current
20
I
F
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
BBY 57-03W
Aug-03-1998
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 8 V
I
R
-
-
1
nA
Reverse current
V
R
= 8 V, T
A
= 65 C
I
R
-
-
100
AC characteristics
pF
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2.5 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
16.5
-
-
4
18.6
-
-
5.5
17.5
8.7
7.1
4.73
C
T
-
C
T1
/C
T3
Capacitance ratio
V
R
= 1 V, V
R
= 3 V, f = 1 MHz
-
2.45
-
-
C
T1
/C
T4
Capacitance ratio
V
R
= 1 V, V
R
= 4 V, f = 1 MHz
3
4.5
3.7
Series resistance
V
R
= 1 V, f = 470 MHz
0.3
-
r
s
-
Case capacitance
f
= 1 MHz
C
C
pF
-
0.09
-
Series inductance
L
s
-
nH
1.8
-
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