Aug-29-2001
1
BBY58-05W/BBY58-06W
1
3
VSO05561
2
Silicon Tuning Diodes
Excellent linearity
High Q hyperabrupt tuning diode
Low series inductance
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For low frequency control elements
such as TCXOs and VCXOs
Very low capacitance spread
BBY58-06W
BBY58-05W
EHA07006
1
3
2
EHA07004
1
3
2
Type
Marking
Pin Configuration
Package
BBY58-05W
BBY58-06W
B5s
B6s
1 = A1
1 = C1
2 = A2
2 = C2
3 = C1/2
3 = A1/2
SOT323
SOT323
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
10
V
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
Aug-29-2001
2
BBY58-05W/BBY58-06W
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 8 V
V
R
= 8 V, T
A
= 85 C
I
R
-
-
-
-
10
100
nA
AC Characteristics
Diode capacitance-
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
C
T
17.5
-
-
5.5
18.3
12.35
8.6
6
19.3
-
-
6.6
pF
Capacitance ratio
V
R
= 1 V, V
R
= 3 V, f = 1 MHz
C
T1
/C
T3
-
2.15
-
-
Capacitance ratio
V
R
= 1 V, V
R
= 4 V, f = 1 MHz
C
T1
/C
T4
2.8
3.05
3.3
Series resistance
V
R
= 1 V, f = 470 MHz
r
S
-
0.25
-
Case capacitance
f = 1 MHz
C
C
-
0.1
-
pF
Series inductance
L
S
-
1.4
-
nH
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