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BC847PN
Jul-02-2001
1
NPN/PNP Silicon AF Transistor Array
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Tape loading orientation
VPS05604
6
3
1
5
4
2
EHA07177
6
5
4
3
2
1
C1
B2
E2
C2
B1
E1
TR1
TR2
EHA07193
1 2 3
4
5
6
W1s
Direction of Unreeling
Top View
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
Type
Marking
Pin Configuration
Package
BC847PN
1Ps
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Value
Symbol
Unit
V
Collector-emitter voltage
V
CEO
45
Collector-base voltage
50
V
CBO
Collector-emitter voltage
V
CES
V
50
V
EBO
V
Emitter-base voltage
5
mA
DC collector current
I
C
100
200
Peak collector current
I
CM
Total power dissipation
, T
S
= 115 C
mW
P
tot
250
T
j
150
Junction temperature
C
-65 ... 150
Storage temperature
T
stg
Thermal Resistance
Junction - soldering point
1)
R
thJS
140
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BC847PN
Jul-02-2001
2
Electrical Characteristics
at T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics per Transistor
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0
V
(BR)CEO
45
-
-
V
Collector-base breakdown voltage
I
C
= 10 A, I
E
= 0
V
(BR)CBO
50
-
-
Collector-emitter breakdown voltage
I
C
= 10 A, V
BE
= 0
V
(BR)CES
50
-
-
Emitter-base breakdown voltage
I
E
= 10 A, I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 30 V, I
E
= 0
I
CBO
-
-
15
nA
Collector cutoff current
V
CB
= 30 V, I
E
= 0 , T
A
= 150 C
I
CBO
-
-
5
A
DC current gain 1)
I
C
= 10 A, V
CE
= 5 V
I
C
= 2 mA, V
CE
= 5 V
h
FE
-
200
250
290
-
630
-
Collector-emitter saturation voltage1)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
CEsat
-
-
90
200
300
650
mV
Base-emitter saturation voltage 1)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
BEsat
-
-
700
900
-
-
mV
Base-emitter voltage 1)
I
C
= 2 mA, V
CE
= 5 V
I
C
= 10 mA, V
CE
= 5 V
V
BE(ON)
580
-
660
-
750
820
1) Pulse test: t < 300
s; D < 2%
BC847PN
Jul-02-2001
3
Electrical Characteristics at T
A
=25C, unless otherwise specified
Parameter
Symbol
Unit
Values
min.
typ.
max.
AC Characteristics per Transistor
Transition frequency
I
C
= 20 mA, V
CE
= 5 V, f = 100 MHz
-
-
MHz
250
f
T
2
C
cb
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
-
-
pF
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
-
10
C
eb
-
Short-circuit input impedance
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz
4.5
k
-
h
11e
-
-
Open-circuit reverse voltage transf.ratio
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz
2
-
10
-4
h
12e
Short-circuit forward current transf.ratio
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz
-
-
330
-
h
21e
Open-circuit output admittance
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz
h
22e
-
30
-
S
BC847PN
Jul-02-2001
4
Total power dissipation
P
tot
= f (T
S
)
0
20
40
60
80
100
120 C
150
T
S
0
50
100
150
200
mW
300
P
tot
Permissible Pulse Load
P
totmax
/ P
totDC
= f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
R
thJS
= f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
BC847PN
Jul-02-2001
5
Collector-base capacitance C
CB
= f (V
CBO
)
Emitter-base capacitance C
EB
= f (V
EBO
)
0
4
10
5
10
10
EHP00361
V
CB0
C
EB0
V
6
2
EB0
V
EB
C
8
10
pF
12
CB0
C
-1
0
1
C
CB
(
(
)
BC 846...850
)
Transition frequency f
T
= f (I
C
)
V
CE
= 5V
10
10
10
10
EHP00363
f
mA
MHz
-1
0
1
2
5
T
3
10
10
2
1
10
5
5
5
C
Collector cutoff current I
CBO
= f (T
A
)
V
CB
= 30V
10
0
50
100
150
EHP00381
T
A
5
10
10
nA
10
CB0
5
5
5
10
10
4
3
2
1
0
-1
max
typ
C
Collector-emitter saturation voltage
I
C
= f (V
CEsat
), h
FE
= 20
10
0
EHP00367
V
CEsat
10
mA
10
C
10
2
1
0
-1
5
5
V
0.3
0.5
100
25
-50
0.1
0.2
0.4
C
C
C
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