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BC846W...BC850W
1
Dec-11-2001
NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types:
BC856W, BC857W, BC858W
BC859W, BC860W (PNP)
1
3
VSO05561
2
Type
Marking
Pin Configuration
Package
BC846AW
BC846BW
BC847AW
BC847BW
BC847CW
BC848AW
BC848BW
BC848CW
BC849BW
BC849CW
BC850BW
BC850CW
1As
1Bs
1Es
1Fs
1Gs
1Js
1Ks
1Ls
2Bs
2Cs
2Fs
4Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
BC846W...BC850W
2
Dec-11-2001
Maximum Ratings
Parameter
Symbol BC846W BC847W
BC850W
BC848W
BC849W
Unit
Collector-emitter voltage
V
CEO
65
45
30
V
Collector-base voltage
V
CBO
80
50
30
Collector-emitter voltage
V
CES
80
50
30
Emitter-base voltage
V
EBO
6
6
5
DC collector current
I
C
100
mA
Peak collector current
I
CM
200
mA
Peak base current
I
BM
200
Peak emitter current
200
I
EM
Total power dissipation
,
T
S
= 124 C
P
tot
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
105
K/W
Electrical Characteristics
at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
BC846W
BC847/850W
BC848/849W
V
(BR)CEO
65
45
30
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 A,
I
E
= 0
BC846W
BC847/850W
BC848/849W
V
(BR)CBO
80
50
30
-
-
-
-
-
-
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BC846W...BC850W
3
Dec-11-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 A,
V
BE
= 0
BC846W
BC847/850W
BC848/849W
V
(BR)CES
80
50
30
-
-
-
-
-
-
V
Emitter-base breakdown voltage
I
E
= 1 A,
I
C
= 0
BC846/847W
BC848-850W
V
(BR)EBO
6
5
-
-
-
-
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
I
CBO
-
-
15
nA
Collector cutoff current
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 C
I
CBO
-
-
5
A
DC current gain 1)
I
C
= 10 A,
V
CE
= 5 V
h
FE
-group A
h
FE
-group B
h
FE
-group C
h
FE
-
-
-
140
250
480
-
-
-
-
DC current gain 1)
I
C
= 2 mA,
V
CE
= 5 V
h
FE
-group A
h
FE
-group B
h
FE
-group C
h
FE
110
200
420
180
290
520
220
450
800
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
CEsat
-
-
90
200
250
600
mV
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
BEsat
-
-
700
900
-
-
Base-emitter voltage 1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
V
BE(ON)
580
-
660
-
700
770
1) Pulse test: t
=
300
s, D = 2%
BC846W...BC850W
4
Dec-11-2001
Electrical Characteristics at T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
-
250
-
MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
C
cb
-
2
3
pF
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
eb
-
10
15
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
h
11e
-
-
-
2.7
4.5
8.7
-
-
-
k
Open-circuit reverse voltage transf.ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
h
12e
-
-
-
1.5
2
3
-
-
-
10
-4
Short-circuit forward current transf.ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
h
21e
-
-
-
200
330
600
-
-
-
-
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
h
22e
-
-
-
18
30
60
-
-
-
S
Noise figure
I
C
= 200 A,
V
CE
= 5 V,
R
S
= 2
k
,
f
= 1 kHz,
f
= 200
Hz
BC846W
BC847W
BC848W
F
-
-
10
dB
Noise figure
I
C
= 200 A,
V
CE
= 5 V,
R
S
= 2
k
,
f
= 1 kHz,
f
= 200
Hz
BC849W
BC850W
F
-
-
1.2
1
4
4
Equivalent noise voltage
I
C
= 200 A,
V
CE
= 5 V,
R
S
= 2
k
,
f = 10 ... 50 Hz
BC850W
V
n
-
-
0.135 V
BC846W...BC850W
5
Dec-11-2001
Collector-base capacitance C
CB
= f (V
CBO
)
Emitter-base capacitance C
EB
= f (V
EBO
)
0
4
10
5
10
10
EHP00361
V
CB0
C
EB0
V
6
2
EB0
V
EB
C
8
10
pF
12
CB0
C
-1
0
1
C
CB
(
(
)
BC 846...850
)
Total power dissipation
P
tot
= f (T
S
)
0
20
40
60
80
100
120 C
150
T
S
0
50
100
150
200
mW
300
P
tot
Permissible pulse load
P
totmax
/ P
totDC
= f (t
p
)
10
EHP00362
-6
0
10
5
D =
5
10
1
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
D
T
t
p
T
tot max
tot
P
DC
P
p
t
Transition frequency f
T
= f (I
C
)
V
CE
= 5V
10
10
10
10
EHP00363
f
mA
MHz
-1
0
1
2
5
T
3
10
10
2
1
10
5
5
5
C
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