BC856W...BC860W
1
Dec-11-2001
PNP Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types:
BC846W, BC847W, BC848W
BC849W, BC850W (NPN)
1
3
VSO05561
2
Type
Marking
Pin Configuration
Package
BC856AW
BC856BW
BC857AW
BC857BW
BC857CW
BC858AW
BC858BW
BC858CW
BC859AW
BC859BW
BC859CW
BC860BW
BC860CW
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
BC856W...BC860W
2
Dec-11-2001
Maximum Ratings
Parameter
Symbol BC856W BC857W
BC860W
BC858W
BC859W
Unit
Collector-emitter voltage
V
CEO
65
45
30
V
Collector-base voltage
V
CBO
80
50
30
Collector-emitter voltage
V
CES
80
50
30
Emitter-base voltage
V
EBO
5
5
5
DC collector current
I
C
100
mA
Peak collector current
I
CM
200
mA
Peak base current
I
BM
200
Peak emitter current
200
I
EM
Total power dissipation
,
T
S
= 124 C
P
tot
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
105
K/W
Electrical Characteristics
at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
BC856W
BC857/860W
BC858/859W
V
(BR)CEO
65
45
30
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 A,
I
E
= 0
BC856W
BC857/860W
BC858/859W
V
(BR)CBO
80
50
30
-
-
-
-
-
-
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BC856W...BC860W
3
Dec-11-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 A,
V
BE
= 0
BC856W
BC857/860W
BC858/859W
V
(BR)CES
80
50
30
-
-
-
-
-
-
V
Emitter-base breakdown voltage
I
E
= 1 A,
I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
I
CBO
-
-
15
nA
Collector cutoff current
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 C
I
CBO
-
-
5
A
DC current gain 1)
I
C
= 10 A,
V
CE
= 5 V
h
FE
-group A
h
FE
-group B
h
FE
-group C
h
FE
-
-
-
140
250
480
-
-
-
-
DC current gain 1)
I
C
= 2 mA,
V
CE
= 5 V
h
FE
-group A
h
FE
-group B
h
FE
-group C
h
FE
125
220
420
180
290
520
250
475
800
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
CEsat
-
-
75
250
300
650
mV
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
BEsat
-
-
700
850
-
-
Base-emitter voltage 1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
V
BE(ON)
600
-
650
-
750
820
1) Pulse test: t
=
300
s, D = 2%
BC856W...BC860W
4
Dec-11-2001
Electrical Characteristics at T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
-
250
-
MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
C
cb
-
3
5
pF
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
eb
-
10
15
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
h
11e
-
-
-
2.7
4.5
8.7
-
-
-
k
Open-circuit reverse voltage transf.ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
h
12e
-
-
-
1.5
2
3
-
-
-
10
-4
Short-circuit forward current transf.ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
h
21e
-
-
-
200
330
600
-
-
-
-
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
h
22e
-
-
-
18
30
60
-
-
-
S
Noise figure
I
C
= 200 A,
V
CE
= 5 V,
R
S
= 2
k
,
f
= 1 kHz,
f
= 200
Hz
BC856W
BC857W
BC858W
F
-
-
10
dB
Noise figure
I
C
= 200 A,
V
CE
= 5 V,
R
S
= 2
k
,
f
= 1 kHz,
f
= 200
Hz
BC859W
BC860W
F
-
-
1
1
4
4
Equivalent noise voltage
I
C
= 200 A,
V
CE
= 5 V,
R
S
= 2
k
,
f = 10 ... 50 Hz
BC860W
V
n
-
-
0.11
V
BC856W...BC860W
5
Dec-11-2001
Collector-base capacitance C
CB
= f (V
CBO
)
Emitter-base capacitance C
EB
= f (V
EBO
)
0
4
10
5
10
10
EHP00376
V
CB0
C
EB0
V
6
2
EB0
V
EBO
C
8
10
pF
12
CB0
C
-1
0
1
C
CBO
(
(
)
BC 856...860
)
Total power dissipation
P
tot
= f (T
S
)
0
20
40
60
80
100
120 C
150
T
S
0
50
100
150
200
mW
300
P
tot
Permissible pulse load
P
totmax
/ P
totDC
= f (t
p
)
10
EHP00377
-6
0
10
5
D =
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
D
T
t
p
T
tot max
tot
P
DC
P
p
t
Transition frequency f
T
= f (I
C
)
V
CE
= 5V
10
10
10
10
EHP00378
f
mA
MHz
-1
0
1
2
5
T
3
10
10
2
1
10
5
5
5
C
BC856W...BC860W
6
Dec-11-2001
Collector cutoff current I
CBO
= f (T
A
)
V
CB
= 30V
10
0
50
100
150
EHP00381
T
A
5
10
10
nA
10
CB0
5
5
5
10
10
4
3
2
1
0
-1
max
typ
C
Collector-emitter saturation voltage
I
C
= f (V
CEsat
), h
FE
= 20
10
0
EHP00380
V
CEsat
10
mA
10
10
2
1
0
-1
5
5
V
0.3
0.5
100
25
-50
0.1
0.2
0.4
C
C
C
C
DC current gain h
FE
= f (I
C
)
V
CE
= 5V
10
10
10
10
EHP00382
h
mA
-2
-1
1
2
FE
3
10
10
2
0
10
5
5
10
1
0
10
5
5
5
5
100
25
-50
C
C
C
C
Base-emitter saturation voltage
I
C
= f (V
BEsat
), h
FE
= 20
0
10
EHP00379
BEsat
V
0.6
V
1.2
-1
10
0
10
1
2
10
5
5
C
mA
0.2
0.4
0.8
C
25
C
100 C
-50C
BC856W...BC860W
7
Dec-11-2001
h parameter h
e
= f (I
C
) normalized
V
CE
= 5V
10
10
10
BC 856...860
EHP00383
mA
-1
0
1
5
e
h
2
10
-1
10
1
10
10
0
5
5
5
h
11e
h
12e
h
21e
h
22e
V
CE
= 5 V
C
h parameter h
e
= f (V
CE
) normalized
I
C
= 2mA
0
0
10
20
30
BC 856...860
EHP00384
V
CE
h
e
V
1.0
0.5
1.5
2.0
= 2 mA
h
11
12
h
h
22
C
Noise figure F = f (V
CE
)
I
C
= 0.2mA, R
S
= 2k
, f = 1kHz
0
10
10
10
10
BC 856...860
EHP00385
V
CE
F
V
10
5
15
dB
20
-1
0
1
2
5
5
Noise figure F = f (f)
I
C
= 0.2mA, V
CE
= 5V, R
S
= 2k
10
10
10
10
BC 856...860
EHP00386
F
kHz
dB
-2
-1
1
2
20
10
0
5
15
f
0
10
BC856W...BC860W
8
Dec-11-2001
Noise figure F = f (I
C
)
V
CE
= 5V, f = 1kHz
10
10
10
10
BC 856...860
EHP00388
F
mA
-3
-2
0
1
20
10
0
5
15
-1
10
= 1 M
100 k
10 k
dB
500
1 k
S
R
C
Noise figure F = f (I
C
)
V
CE
= 5V, f = 120Hz
10
10
10
10
BC 856...860
EHP00387
F
mA
-3
-2
0
1
20
10
0
5
15
-1
10
= 1 M
100 k
10 k
dB
500
1 k
S
R
C
Noise figure F = f (I
C
)
V
CE
= 5V, f = 10kHz
10
10
10
10
BC 856...860
EHP00389
mA
-3
-2
0
1
20
10
0
5
15
-1
10
dB
F
C
= 1 M
R
S
100 k
10 k
500
1 k
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