BC856...BC860
1
Dec-11-2001
PNP Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC846, BC847, BC848
BC849, BC850 (NPN)
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
BC856A
BC856B
BC857A
BC857B
BC857C
BC858A
BC858B
BC858C
BC859A
BC859B
BC859C
BC860B
BC860C
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
BC856...BC860
2
Dec-11-2001
Maximum Ratings
Parameter
Symbol
BC856
BC857
BC860
BC858
BC859
Unit
Collector-emitter voltage
V
CEO
65
45
30
V
Collector-base voltage
V
CBO
80
50
30
Collector-emitter voltage
V
CES
80
50
30
Emitter-base voltage
V
EBO
5
5
5
DC collector current
I
C
100
mA
Peak collector current
I
CM
200
mA
Peak base current
I
BM
200
Peak emitter current
200
I
EM
Total power dissipation
,
T
S
= 71 C
P
tot
330
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
240
K/W
Electrical Characteristics
at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
BC856
BC857/860
BC858/859
V
(BR)CEO
65
45
30
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 A,
I
E
= 0
BC856
BC857/860
BC858/859
V
(BR)CBO
80
50
30
-
-
-
-
-
-
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BC856...BC860
3
Dec-11-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 A,
V
BE
= 0
BC856
BC857/860
BC858/859
V
(BR)CES
80
50
30
-
-
-
-
-
-
V
Emitter-base breakdown voltage
I
E
= 1 A,
I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
I
CBO
-
-
15
nA
Collector cutoff current
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 C
I
CBO
-
-
5
A
DC current gain 1)
I
C
= 10 A,
V
CE
= 5 V
h
FE
-group A
h
FE
-group B
h
FE
-group C
h
FE
-
-
-
140
250
480
-
-
-
-
DC current gain 1)
I
C
= 2 mA,
V
CE
= 5 V
h
FE
-group A
h
FE
-group B
h
FE
-group C
h
FE
125
220
420
180
290
520
250
475
800
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
CEsat
-
-
75
250
300
650
mV
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
BEsat
-
-
700
850
-
-
Base-emitter voltage 1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
V
BE(ON)
600
-
650
-
750
820
1) Pulse test: t
=
300
s, D = 2%
BC856...BC860
4
Dec-11-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
-
250
-
MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
C
cb
-
3
-
pF
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
eb
-
8
-
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
h
11e
-
-
-
2.7
4.5
8.7
-
-
-
k
Open-circuit reverse voltage transf.ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
h
12e
-
-
-
1.5
2
3
-
-
-
10
-4
Short-circuit forward current transf.ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
h
21e
-
-
-
200
330
600
-
-
-
-
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
h
22e
-
-
-
18
30
60
-
-
-
S
Noise figure
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2
k
,
f
= 1 kHz,
f
= 200
Hz
BC 859
BC 860
F
-
1
4
dB
Equivalent noise voltage
I
C
= 200 A,
V
CE
= 5 V,
R
S
= 2
k
,
f = 10 ... 50 Hz
BC 860
V
n
-
-
0.11
V
BC856...BC860
5
Dec-11-2001
Collector-base capacitance C
CB
= f (V
CBO
)
Emitter-base capacitance C
EB
= f (V
EBO
)
0
4
10
5
10
10
EHP00376
V
CB0
C
EB0
V
6
2
EB0
V
EBO
C
8
10
pF
12
CB0
C
-1
0
1
C
CBO
(
(
)
BC 856...860
)
Total power dissipation P
tot
= f(T
S
)
0
15
30
45
60
75
90 105 120
C
150
T
S
0
30
60
90
120
150
180
210
240
270
300
mW
360
P
tot
Permissible pulse load
P
totmax
/ P
totDC
= f (t
p
)
10
EHP00377
-6
0
10
5
D =
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
D
T
t
p
T
tot max
tot
P
DC
P
p
t
Transition frequency f
T
= f (I
C
)
V
CE
= 5V
10
10
10
10
EHP00378
f
mA
MHz
-1
0
1
2
5
T
3
10
10
2
1
10
5
5
5
C
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