Dec-09-2003
1
BCR151...
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
= 100k
, R
2
= 100k
)
BCR151F/L3
BCR151T
EHA07183
3
2
1
C
E
B
R
1
R
2
Type
Marking
Pin Configuration
Package
BCR151F*
BCR151L3*
BCR151T*
UDs
UD
UDs
1=B
1=B
1=B
2=E
2=E
2=E
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
TSFP-3
TSLP-3-4
SC75
* Preliminary
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
50
V
Collector-base voltage
V
CBO
50
Emitter-base voltage
V
EBO
10
Input on voltage
V
i(on)
50
Collector current
I
C
50
mA
Total power dissipation-
BCR151F, T
S
128C
BCR151L3, T
S
135C
BCR151T, T
S
109C
P
tot
250
250
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Dec-09-2003
2
BCR151...
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BCR151F
BCR151L3
BCR151T
R
thJS
90
60
165
K/W
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 100 A, I
B
= 0
V
(BR)CEO
50
-
-
V
Collector-base breakdown voltage
I
C
= 10 A, I
E
= 0
V
(BR)CBO
50
-
-
Collector-base cutoff current
V
CB
= 40 V, I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 10 V, I
C
= 0
I
EBO
-
-
75
A
DC current gain
2)
I
C
= 5 mA, V
CE
= 5 V
h
FE
70
-
-
-
Collector-emitter saturation voltage
2)
I
C
= 5 mA, I
B
= 0.25 mA
V
CEsat
-
-
0.3
V
Input off voltage
I
C
= 100 A, V
CE
= 5 V
V
i(off)
0.5
-
1.8
Input on voltage
I
C
= 1 mA, V
CE
= 0.3 V
V
i(on)
1
-
3
Input resistor
R
1
70
100
130
k
Resistor ratio
R
1
/R
2
0.9
1
1.1
-
AC Characteristics
Transition frequency
I
C
= 10 mA, V
CE
= 5 V, f = 100 MHz
f
T
-
120
-
MHz
Collector-base capacitance
V
CB
= 10 V, f = 100 MHz
C
cb
-
3
-
pF
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
2Pulse test: t < 300s; D < 2%
Dec-09-2003
3
BCR151...
DC current gain h
FE
=
(I
C
)
V
CE
= 5 V (common emitter configuration)
10
-4
10
-3
10
-2
10
-1
A
I
C
1
10
2
10
3
10
h
FE
Collector-emitter saturation voltage
V
CEsat
=
(I
C
), h
FE
= 20
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 V
0.5
V
CEsat
-4
10
-3
10
-2
10
-1
10
A
I
C
Input on Voltage V
i(on)
=
(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
-1
10
0
10
1
10
2
V
V
i(on)
-5
10
-4
10
-3
10
-2
10
-1
10
A
I
C
Input off voltage V
i(off)
=
(I
C
)
V
CE
= 5V (common emitter configuration)
0.5
1
1.5
2
2.5
3
V
4
V
i(off)
-6
10
-5
10
-4
10
-3
10
-2
10
A
I
C
Dec-09-2003
4
BCR151...
Total power dissipation P
tot
=
(T
S
)
BCR151F
0
20
40
60
80
100
120 C
150
T
S
0
50
100
150
200
mW
300
P
tot
Total power dissipation P
tot
=
(T
S
)
BCR151L3
0
20
40
60
80
100
120 C
150
T
S
0
50
100
150
200
mW
300
P
tot
Total power dissipation P
tot
=
(T
S
)
BCR151T
0
20
40
60
80
100
120 C
150
T
S
0
50
100
150
200
mW
300
P
tot
Permissible Puls Load R
thJS
=
(t
p
)
BCR151F
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
K/W
R
thJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Dec-09-2003
5
BCR151...
Permissible Pulse Load
P
totmax
/P
totDC
=
(t
p
)
BCR151F
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
P
totmax
/
P
totDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load R
thJS
=
(t
p
)
BCR151L3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
tp
-1
10
0
10
1
10
2
10
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax
/P
totDC
=
(t
p
)
BCR151L3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
P
totmax
/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load R
thJS
=
(t
p
)
BCR151T
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Dec-09-2003
6
BCR151...
Permissible Pulse Load
P
totmax
/P
totDC
=
(t
p
)
BCR151T
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
P
totmax
/
P
totDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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